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KTA1042D-Y-RTF/P

KTA1042D-Y-RTF/P

  • 厂商:

    KEC

  • 封装:

    TO252

  • 描述:

    晶体管类型:-;集射极击穿电压(Vceo):100V;集电极电流(Ic):5A;功率(Pd):20W;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):2V@4A,400mA;直流电流增益(hF...

  • 数据手册
  • 价格&库存
KTA1042D-Y-RTF/P 数据手册
SEMICONDUCTOR KTA1042D/L TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J D Low Collector-Emitter Saturation Voltage : VCE(sat)=-2.0V(Max.). M O K E Q B Complementary to KTC2022D/L. MAXIMUM RATING (Ta=25 H ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V Collector Current IC -5 A Base Current IB -0.5 A Collector Power Dissipation (Tc=25 ) PC 20 W Junction Temperature Tj 150 Tstg -55 150 2 3 1. BASE 2. COLLECTOR 3. EMITTER DPAK I A C J K Q B Storage Temperature Range 1 L F MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 5.0 + 0.2 _ 0.2 1.10 + _ 0.2 2.70 + _ 0.1 2.30 + 1.00 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 2.00 + 0.20 _ 0.10 0.50 + _ 0.10 0.91+ _ 0.1 0.90 + _ 0.10 1.00 + 0.95 MAX D CHARACTERISTIC P F DIM A B C D E F H I J K L M O P Q P H E G F 1 F 2 L 3 DIM A B C D E F G H I J K L P Q MILLIMETERS _ 0.2 6.60 + _ 0.2 6.10 + _ 0.2 5.0 + _ 0.2 1.10 + _ 0.6 9.50 + _ 0.1 2.30 + _ 0.1 0.76 + 1.0 MAX _ 0.2 2.30 + _ 0.1 0.5 + _ 0.2 2.0 + _ 0.1 0.50 + _ 0.1 1.0 + 0.90 MAX 1. BASE 2. COLLECTOR 3. EMITTER IPAK ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-100V, IE=0 - - -100 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA V(BR)CEO IC=-50mA, IB=0 -100 - - V hFE(1) (Note) VCE=-5V, IC=-1A 70 - 240 hFE(2) VCE=-5V, IC=-4A 20 - - VCE(sat) IC=-4A, IB=-0.4A - - -2.0 V Base-Emitter Voltage VBE VCE=-5V, IC=-4A - - -1.5 V Transition Frequency fT VCE=-5V, IC=-1A - 30 - MHz VCB=-10V, IE=0, f=1MHz - 270 - pF Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE(1) Classification 2003. 3. 27 O:70~140, Y:120~240. Revision No : 3 1/2 KTA1042D/L VCE(sat) - I C -200 -250 -150 -100 -4 -3 -50 -2 IB =-20mA -1 0 COMMON EMITTER Tc=25 C 0 -1 -3 -2 -4 0 -5 -6 -7 COMMON EMITTER I C /I B =10 1 -0.5 -0.3 75 C = Tc -0.1 Tc=25 C Tc=-25 C -0.05 -0.03 -0.01 -0.03 -0.1 -0.3 -1 -3 -5 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) h FE - I C SAFE OPERATING AREA -20 300 Tc=75 C 100 Tc=-25 C 50 30 COMMON EMITTER VCE =-5V 10 -0.01 -0.03 -0.1 -0.3 -1 I C MAX (CONTINUOUS) -5 -3 O Tc PER =2 A 5 TIO C N -1 -0.5 -0.1 * * SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -0.3 -3 -5 COLLECTOR CURRENT I C (A) 1s DC s* 1m * ms 10 s * 0m Tc=25 C I C MAX(PULSED) * -10 10 COLLECTOR CURRENT I C (A) 500 DC CURRENT GAIN hFE 2 -3 -10 -30 VCEO MAX. COLLECTOR CURRENT I C (A) -5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C - V CE -100 -200 COLLECTOR POWER DISSIPATION PC (W) COLLECTOR-EMITTER VOLTAGE VCE (V) Pc - Ta 24 1 Tc=25 C 1 20 2 Ta=25 C 16 12 8 4 2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 27 Revision No : 3 2/2
KTA1042D-Y-RTF/P 价格&库存

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