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KTA1270_07

KTA1270_07

  • 厂商:

    KEC

  • 封装:

  • 描述:

    KTA1270_07 - EPITAXIAL PLANAR PNP TRANSISTOR - KEC(Korea Electronics)

  • 数据手册
  • 价格&库存
KTA1270_07 数据手册
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTA1270 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. Complementary to KTC3202. K D E G N A Excellent hFE Linearity MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -35 -30 -5 -500 500 625 150 -55 150 UNIT F H F V L V V mA mA mW 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 + 0.30 - 0.10 0.05 1.00 J 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain ) TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 240 -0.25 -1.0 V V MHz pF UNIT A A SYMBOL ICBO IEBO hFE(1) (Note) hFE(2) (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification hFE(2) Classification 0:70 140, 0:25Min., Y:120 VCE(sat) VBE fT Cob 240 Y:40Min. 2007. 6. 8 Revision No : 1 1/2 KTA1270 IC - VCE COLLECTOR CURRENT IC (mA) -600 COMMON EMITTER Ta=25 C -4 -3 hFE - IC 1k COMMON EMITTER DC CURRENT GAIN hFE -500 -400 -300 -200 -100 0 0 -8 -7 -6 -5 500 300 Ta=100 C Ta=25 C VCE =-6V -2 I B =-1mA 100 50 30 Ta=-25 C VCE =-1V 0 -1 -2 -3 -4 -5 10 -0.3 -1 -3 -10 -30 -100 -300 -1k COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -3k COMMON EMITTER I C /I B =10 COMMON IB - VBE BASE CURRENT IB (µA) -1k -300 -100 -30 -10 -3 -1 -0.3 0 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 -3 -10 Ta=100 C Ta=25 C Ta=-25 C EMITTER VCE =-6V 00 C Ta=2 5C Ta=25 C -30 -100 -300 -1k -0.2 -0.4 Ta=1 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) SAFE OPERATING AREA COLLECTOR CURRENT IC (mA) -10000 IC MAX(PULSE)* 1mS* IC MAX(CONTINUOUS) 10mS* 100mS* -1000 -100 DC DPERATION(Ta=25 C) -10 *SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.1 -1 -10 -100 COLLECTOR-EMITTER VOLTAGE VCE (V) 2007. 6. 8 Revision No : 1 2/2
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