SEMICONDUCTOR
TECHNICAL DATA
POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION.
B
KTA1296
EPITAXIAL PLANAR PNP TRANSISTOR
C
FEATURES
: VCE(sat)=-0.5V(Max.) at IC=-2A Complementary to KTC3266.
K D E G N
A
Low Saturation Voltage.
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -20 -20 -6 -2 -0.5 625 150 -55 150 UNIT
F
H
F
V
L
V V A A mW
1
2
3
M
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. COLLECTOR 3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(1) Classification Y:120 240,
)
TEST CONDITION VCB=-20V, IE=0 VEB=-6V, IC=0 VCE=-2V, IC=-0.1A VCE=-2V, IC=-2A IC=-2A, IB=-0.1A VCE=-2V, IC=-0.1A VCE=-2V, IC=-0.5A VCB=-10V, IE=0, f=1MHz MIN. 120 40 TYP. 120 40 MAX. -0.1 -0.1 400 -0.5 -0.85 V V MHz pF UNIT A A ICBO IEBO
SYMBOL
hFE(1) (Note) hFE(2) VCE(sat) VBE fT Cob GR:200 400
2000. 11. 30
Revision No : 0
1/2
KTA1296
I C - VCE
COLLECTOR CURRENT I C (mA) -2000 -1600 -1200 -800 -400 0 0 -4 -8 DC CURRENT GAIN h FE
I B =-25mA I B =-20mA I B =-15mA I B =-10mA I B =-8mA I B =-6mA I B =-4mA I B =-3mA I B =-2mA I B =-1mA I B =-0mA COMMON EMITTER Ta=25 C
h FE - I C
1k 500 300
Ta=100 C Ta=25 C Ta=-25 C
100 50 30 10 -1 -3 -10
COMMON EMITTER VCE =-2V
-30
-100
-300
-1k
-3k
-12
-16
-20
-24
COLLECTOR CURRENT I C (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
IC - VBE
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) -5 -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -1 -3
COMMON EMITTER I C /I B =20
-2000 -1600
C Ta=25 C
COMMON EMITTER V CE =-2V
Ta=100
Ta=25 C
-800 -400 0 0 -0.4
0 =1 Ta
0
C
Ta=-25 C
-0.8
Ta=-25
-1200
C
-1.2
-1.6
-2.0
-2.4
-10
-30
-100
-300
-1K
-3K
BASE-EMITTER VOLTAGE V BE (V)
COLLECTOR CURRENT I C (mA)
SAFE OPERATING AREA
-10
Pc - Ta
COLLECTOR CURRENT I C (A) COLLECTOR POWER DISSIPATION P C (W) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) -3 -1 -0.3 -0.1 -0.03
I C MAX.(PULSED)**
1m
I C MAX. (CONTINUOUS)
DC OP Ta ERA =2 T 5 IO CN
10 m s* 10 0m s*
s*
-0.01 -0.1
-0.3
-1
-3
-10
COLLECTOR-EMITTER VOLTAGE VCE (V)
2000. 11. 30
Revision No : 0
VCEO MAX.
SINGLE NONREPETITIVE PULSE Ta=25 C * PULSE WIDTH:10ms(MAX.) DUTY CYCLE:30%, Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE
*
-30
2/2
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