KTA1571S

SEMICONDUCTOR TECHNICAL DATA FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability : IC and ICP. Higher Efficiency Leading to Less Heat Generation. L KTA1571S EPITAXIAL PLANAR PNP TRANSISTOR E B L A G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation** Junction Temperature Storage Temperature Range DC Pulse * ) SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING -120 -100 -5 -1 -3 -300 350 150 -55 150 0.6mm. UNIT V V V 2 3 1 P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 C N H mA mW 1. EMITTER 2. BASE 3. COLLECTOR * Pulse Width = 300 S, Duty Cycle 2%. ** Package Mounted on 99.5% Alumina 10 8 K A M SOT-23 MARKING Lot No. Type Name KMA ) TEST CONDITION IC=-100 A IC=-1mA IE=-100 A VCB=-80V, IE=0A VEB=-4V, IC=0A VCES=-80V, VBE=0V IC=-250mA, IB=-25mA IC=-500mA, IB=-50mA IC=-1A, IB=-100mA IC=-1A, IB=-100mA VCE=-5V, IC=-1A VCE=-5V, IC=-1mA VCE=-5V, IC=-250mA VCE=-5V, IC=-500mA VCE=-5V, IC=-1A VCE=-10V, IC=-50mA, f=100MHz VCB=-10V, f=1MHz MIN. -120 -100 -5 150 150 150 125 100 TYP. 17 MAX. -100 -100 -100 -0.12 -0.18 -0.32 -1.1 -1.0 450 MHz pF V V V UNIT V V V nA nA nA SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) (1) VCE(sat) (2) VCE(sat) (3) VBE(sat) VBE hFE(1) hFE(2) hFE(3) hFE(4) fT Cob ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage ** Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage ** Base-Emitter Saturation Voltage ** Base-Emitter Voltag DC Current Gain ** Transition Frequency Collector Output Capacitance ** Pulse Width = 300 S, Duty Cycle 2%. 2010. 2. 24 Revision No :3 J D 1/3 KTA1571S VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -1 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) IC/IB=10 VCE(sat) - I C -1 Ta=25 C -10-1 Ta=100 C -10-1 IC/IB=50 IC/IB=20 Ta=25 C Ta=-55 C -10-2 -10-1 -1 -10 -102 -103 -104 -10-2 -10-1 -1 -10 -102 -103 -104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC/IB=10 h FE - I C 600 DC CURRENT GAIN h FE VCE=-10V Ta=100 C 400 Ta=25 C -1 Ta=-55 C Ta=25 C Ta=100 C 200 Ta=-55 C -10-1 -10-1 -1 -10 -102 -103 -104 0 -10-1 -1 -10 -102 -103 -104 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) VBE(sat) - I C -10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC/IB=20 Ta=25 C I C - VCE -2 COLLECTOR CURRENT IC (A) -1.6 -1.2 -0.8 -0.4 0 IB=18mA IB=22.5mA Ta=25 C IB=40.5mA IB=45mA IB=36mA IB=31.5mA IB=27mA IB=9mA IB=13.5mA IB=4.5mA -1 -10-1 -10-1 -1 -10 -102 -103 -104 0 -1 -2 -3 -4 -5 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 3 2/3 KTA1571S SAFE OPERATING AREA COLLECTOR CURRENT I C (mA) -10000 IC MAX(PULSE)* -1000 100mS 10mS* 1mS* IC MAX(CONTINUOUS) -100 DC OPERATION(Ta=25 C) -10 *SINGLE NONREPETTTTVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE -1 -0.1 -1 -10 -100 -1000 COLLECTOR-EMITTER VOLTAGE VCE (V) 2010. 2. 24 Revision No : 3 3/3