KTC2814

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATION. POWER SWITCHING APPLICATION. C KTC2814 EPITAXIAL PLANAR NPN TRANSISTOR A B E F G D FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1715. H J K L MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 50 5 2 -2 1.5 10 150 -55 150 UNIT V V V A A W 1. EMITTER 2. COLLECTOR 3. BASE N M O 1 2 3 P DIM A B C D E F G H J K L M N O P MILLIMETERS 8.3 MAX 5.8 0.7 _ Φ3.2 + 0.1 3.5 _ 11.0 + 0.3 2.9 MAX 1.0 MAX 1.9 MAX _ 0.75 + 0.15 _ 15.50 + 0.5 _ 2.3 + 0.1 _ 0.65 + 0.15 1.6 3.4 MAX TO-126 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn On Time Switching Time Storage Time Fall Time Note : hFE Classification O:70 140, Y:120 ICBO IEBO V(BR)CEO ) TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=0.5A VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz 20µsec IB1 INPUT IB2 IB1=-I B2 =-0.05A DUTY CYCLE < 1% = OUTPUT I B1 30Ω I B2 SYMBOL MIN. 50 70 40 - TYP. 100 30 0.1 1.0 0.1 MAX. 0.1 0.1 240 0.5 1.2 - UNIT A A V hFE (1) (Note) hFE 2 VCE(sat) VBE(sat) fT Cob ton tstg tf 240 V V MHz pF S VCC =30V 2003. 7. 24 Revision No : 3 1/3 KTC2814 COLLECTOR-EMITTER VOLTAGE VCE (V) STATIC CHARACTERISTICS COLLECTOR CURRENT I C (A) 2.4 2.0 1.6 1.2 0.8 0.4 0 0.4 0.8 1.2 30 VCE =2V COMMON EMITTER Ta=25 C VCE - I C 1.0 0.8 0.6 0.4 0.2 0 COMMON EMITTER Ta=25 C 10 25 20 18 15 12 10 8 6 I B =2mA 4 0 I B =5mA 20 V CE =2V 30 40 BASE EMITTER VOLTAGE VBE (V) 0 0.4 0.8 1.2 1.6 2.0 2.4 20 10 0 2 4 6 8 10 COLLECTOR CURRENT I C (A) BASE CURRENT I B (mA) COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - I C 1.0 0.8 20 I B =5mA COMMON EMITTER Ta=-55 C 10 30 COLLECTOR-EMITTER VOLTAGE VCE (V) VCE - I C 1.0 0.8 0.6 0.4 0.2 0 COMMON EMITTER Ta=100 C 10 20 0.6 0.4 0.2 0 I B =5mA 40 50 30 40 0 0.4 0.8 1.2 1.6 2.0 2.4 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) h FE - I C 300 DC CURRENT GAIN hFE Ta=100 C 1 0.5 0.3 COMMON EMITTER I C /I B =20 100 50 30 Ta=25 C Ta=-55 C 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=-55 C COMMON EMITTER VCE =2V 10 0.01 0.03 0.1 0.3 1 2 0.01 0.01 0.03 0.1 0.3 1 2 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) 2003. 7. 24 Revision No : 3 2/3 KTC2814 SAFE OPERATING AREA 10 COLLECTOR CURRENT I C (A) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.02 100mS* DC OPERATION Ta=25 C * SINGLE NONREPETITIVE PULSE Ta=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE. Pc - Ta 1.6 COLLECTOR POWER DISSIPATION PC (W) I C MAX.(PULSED)* I C MAX.(CONTINOUS) 10ms* 1ms* 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 VCEO MAX. 0.1 0.3 1 3 10 30 100 0 25 50 75 100 125 150 175 COLLECTOR-EMITTER VOLTAGE VCE (V) AMBIENT TEMPERATURE Ta ( C) 2003. 7. 24 Revision No : 3 3/3