KTC2874_03

SEMICONDUCTOR TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES High Emitter-Base Voltage : VEBO=25V(Min.) : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on Resistance : RON=1 (Typ.), (IB=5mA) D d KTC2874 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE B C A High Reverse hFE MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 50 20 25 300 60 625 150 -55 150 UNIT V V V mA mA mW P P DIM A B C d D E G L P T MILLIMETERS 4.7 MAX 5.1 MAX 4.1 MAX 0.45 0.55 MAX 0.8 1.8 12.7 MIN 1.27 0.45 E G T 1 2 3 L 1. EMITTER 2. COLLECTOR 3. BASE TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time *Note) : hFE Classification A:200~700, SYMBOL ICBO IEBO hFE * VCE(sat) VBE fT Cob tON ) TEST CONDITION VCB=50V, IE=0 VEB=25V, IC=0 VCE=2V, IC=4mA IC=30mA, IB=3mA VCE=2V, IC=4mA VCE=6V, IC=4mA VCB=10V, IE=0, f=1MHz OUTPUT INPUT 50Ω 4kΩ 3kΩ MIN. 200 - TYP. 0.042 0.61 30 4.8 160 500 130 MAX. 0.1 0.1 1200 0.1 7 - UNIT A A V V MHz pF tstg tf 10V 1µs DUTY CYCLE < 2% = VBB =-3V 1kΩ nS VCC =12V B: 350 1200 2003. 6. 30 Revision No : 4 1/3 KTC2874 I C - VCE 50 COLLECTOR CURRENT I C (mA) 40 30 20 I B =20µA 140 120 100 80 60 40 I C - V CE (REVERSE REGION) COLLECTOR CURRENT I C (mA) 160 COMMON EMITTER Ta=25 C -10 -8 -6 -4 -2 0 0 COMMON EMITTER Ta=25 C 50 40 30 20 I B=10µA 10 0 0 2 4 6 8 0 0 10 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (mV) 5k DC CURRENT GAIN h FE 3k COMMON EMITTER VCE(sat) - I C 500 300 100 50 30 10 5 3 1 0.1 COMMON EMITTER I C /I B =10 1k 500 300 Ta=100 C VCE =6V Ta=25 C Ta=-25 C VCE =2V 100 50 0.3 1 3 10 30 100 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) I C - V BE TRANSTION FREQUENCY f T (MHz) 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =2V fT - IE 500 300 COMMON EMITTER VCE =6V Ta=25 C 200 C 100 50 30 100 Ta= 1 00 Ta=25 C Ta=-25 C 10 5 -0.1 -0.3 -1 -3 -10 -30 -100 0 0 0.4 0.8 1.2 1.6 BASE-EMITTER VOLTAGE VBE (V) EMITTER CURRENT I E (mA) 2003. 6. 30 Revision No : 4 2/3 KTC2874 C ob - V CB COLLECTOR-EMITTER ON RESISTANCE R ON (Ω) COLLECTOR OUTPUT CAPACITANCE C ob (pF) 30 f=1MHz I E =0 Ta=25 C R ON - I B 100 50 30 10kΩ 1kΩ 10 5 3 10 5 3 1 0.5 0.3 0.01 IB 1 0.3 0.5 1 3 5 10 30 0.03 0.1 0.3 1 3 10 COLLECTOR-BASE VOLTAGE VCB (V) BASE CURRENT I B (mA) Pc - Ta COLLECTOR POWER DISSIPATION P C (mW) 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 6. 30 Revision No : 4 3/3