KTC3209_05

SEMICONDUCTOR TECHNICAL DATA POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time : tstg=1.0 S(Typ.) Complementary to KTA1281. KTC3209 EPITAXIAL PLANAR NPN TRANSISTOR MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING 50 50 5 2 -2 1 150 -55 150 UNIT V V V A A W ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain SYMBOL ICBO IEBO V(BR)CEO V(BR)EBO ) TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 IE=100mA, IB=0 VCE=2V, IC=0.5A (Note) VCE=2V, IC=1.5A IC=1A, IB=0.05A IC=1A, IB=0.05A VCE=2V, IC=0.5A VCB=10V, IE=0, f=1MHz MIN. 50 5 70 40 TYP. 100 30 0.1 1.0 0.1 MAX. 0.1 0.1 240 0.5 1.2 S V V MHz pF UNIT A A V V hFE (1) (Note) hFE (2) (Note) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time Note : hFE Classification 0:70 140, Y:120 VCE(sat) VBE(sat) fT Cob ton tstg tf 240 2005. 12. 2 Revision No : 1 1/3 KTC3209 2005. 12. 2 Revision No : 1 2/3 KTC3209 2005. 12. 2 Revision No : 1 3/3