KTC4380

SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE APPLICATION FEATURES ・High Voltage : VCEO=160V. ・Large Continuous Collector Current Capability. ・Recommended for LED Drive Application. A H KTC4380 EPITAXIAL PLANAR NPN TRANSISTOR C G D K F F D MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC PC* Tj Tstg RATING 160 160 6 1 0.5 0.5 W 1 150 -55～150 ℃ ℃ Type Name UNIT V V V A A 1 2 3 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX _ 2.50 + 0.20 1.70 MAX 0.45+0.15/-0.10 4.25 MAX _ 1.50 + 0.10 0.40 TYP 1.75 MAX 0.75 MIN 0.5+0.10/-0.05 Marking hFE Rank Lot No. * : Mounted on ceramic substrate (250mm2 × 0.8t) ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification Y(2) : 160~320 SYMBOL ICBO IEBO V(BR)CEO hFE (Note) TEST CONDITION VCB=160V, IE=0 VEB=6V, IC=0 IC=10mA, IB=0 VCE=5V, IC=200mA IC=500mA, IB=50mA VCE=5V, IC=5mA VCE=5V, IC=200mA VCB=10V, IE=0, f=1MHz D2 MIN. 160 160 0.45 TYP. 100 15 J B E SOT-89 MAX. 1.0 1.0 320 1.5 0.75 - UNIT μ A μ A V VCE(sat) VBE fT Cob V V MHz pF 2010. 1. 6 Revision No : 0 1/3 KTC4380 I C - V CE 1.0 COLLECTOR CURRENT IC (A) 0.8 0.6 0.4 0.2 0 15 I C - V BE COLLECTOR CURRENT I C (A) COMMON 10 1.0 0.8 0.6 0.4 0.2 0 C Ta=25 C Ta=0 C 6 4 3 2.5 2 1.5 1 I B =0.5mA 0 COMMON EMITTER VCE =5V EMITTER Ta=25 C 0 4 8 12 16 20 24 28 0 0.2 0.4 Ta=1 00 0.6 0.8 1.0 1.2 1.4 COLLECTOR-EMITTER VOLTAGE V CE (V) BASE-EMITTER VOLTAGE V BE (V) h FE - I C 500 DC CURRENT GAIN h FE Ta=25 C h FE - I C 500 300 Ta=100 C Ta=25 C Ta=0 C DC CURRENT GAIN h FE 300 COMMON EMITTER 10 100 50 100 50 5 V VC E =2 COMMON EMITTER VCE =10V VCE =5V 20 10 30 50 100 300 1k 20 10 30 50 100 300 1k COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA) V CE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE V CE(sat) (V) 0.3 COMMON EMITTER Ta=25 C VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 0.5 0.3 COMMON EMITTER I C /IB =10 0.5 0.1 0.05 0.03 I C /I B =10 IC /I B =5 0.1 0.05 0.03 Ta=100 C Ta=25 C Ta=0 C 0.01 0.01 5 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 5 10 30 100 300 1k COLLECTOR CURRENT I C (mA) 2010. 1. 6 Revision No : 0 2/3 KTC4380 COLLECTOR OUTPUT CAPACITANCE Cob (pF) fT - IC TRANSITION FREQUENCY f T (MHz) 500 300 COMMON EMITTER Ta=25 C VCE =5V VCE =2V C ob - V CB 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 100 50 30 10 5 10 2 5 10 30 100 400 2 1 3 5 10 30 50 100 200 COLLECTOR CURRENT I C (mA) COLLECTOR-BASE VOLTAGE V CB (V) 3k COLLECTOR CURRENT I C (mA) 1k 500 300 100 50 30 10 5 3 1 COLLECTOR POWER DISSIPATION PC (W) SAFE OPERATING AREA I C MAX(PULSE) I C MAX(CONTINUOUS) * P C - Ta 1.2 1.0 0.8 0.6 0.4 0.2 0 2 1 1 MOUNTED ON CERAMIC 10 m S DC OP ER * 10 0m S SUBSTRATE (250mm 2 x0.8t) 2 Ta=25 C S* 1m AT * IO N * SINGLE NONREPETITIVE PULSE CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 30 100 300 0.3 1 3 10 COLLECTOR-EMITTER VOLTAGE V CE (V) 2010. 1. 6 Revision No : 0 3/3