KTC4666_08

SEMICONDUCTOR TECHNICAL DATA LOW NOISE AMPLIFIER APPLICATION. KTC4666 EPITAXIAL PLANAR NPN TRANSISTOR FEATURE ・High hFE : hFE=600～3600. ・Noise Figure : 0.5dB(Typ.) at f=100kHz. A J G E M B M 2 1 3 D DIM A B C D E G H MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 8 150 30 200 150 -55～150 UNIT V V V mA mA mW ℃ ℃ 1. EMITTER 2. BASE 3. COLLECTOR C H N K N J K L M N L USM * Package mounted on 99.5% alumina 10mm×8mm×0.6mm Marking h FE Rank Lot No. Type Name T MIN. 600 500 600 100 TYP. 0.05 0.07 0.12 250 3.5 0.5 0.3 MAX. 0.1 0.1 3600 3600 0.15 0.2 0.25 dB V V V MHz pF UNIT μ A μ A ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current SYMBOL ICBO IEBO hFE (1)(Note) DC Current Gain hFE (2) hFE (3) VCE(sat)(1) Collector-Emitter Saturation Voltage VCE(sat)(2) VCE(sat(3) Transition Frequency Collector Output Capacitance fT Cob NF (1) Noise Figure NF (2) Note : hFE Classification A:600～1800 , B:1200～3600 TEST CONDITION VCB=50V, IE=0 VEB=8V, IC=0 VCE=6V, IC=2mA VCE=5V, IC=1mA VCE=10V, IC=2mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=100kHz, Rg=10kΩ VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ 2008. 8. 29 Revision No : 4 1/3 KTC4666 I C - V CE 160 COLLECTOR CURRENT I C (mA) 400 200 COMMON EMITTER Ta=25 C 100 80 h FE - I C 5k 3k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10 COMMON EMITTER V CE =6V Ta=100 C Ta=25 C Ta=-25 C 120 80 40 60 50 40 30 20 I B =10µA 0 0 0 2 4 6 8 0.1 0.3 1 3 10 30 100 300 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) Ta=100 C Ta=25 C Ta=-25 C VBE(sat) - I C 30 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) 10 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COMMON EMITTER I C /I B =10 Ta=25 C COMMON EMITTER I C /I B =10 I C - V BE TRANSITION FREQUENCY f T (MHz) 160 COLLECTOR CURRENT I C (mA) COMMON EMITTER VCE =6V fT - IE 5k 3k 1k 500 300 100 50 30 10 -0.1 VCC =10V Ta=25 C 120 Ta=100 C 80 40 0 0 0.4 0.8 1.2 1.6 BASE EMITTER VOLTAGE V BE (V) Ta=-25 C Ta=25 C -0.3 -1 -3 -10 -30 -100 -300 EMITTER CURRENT I E (mA) 2008. 8. 29 Revision No : 4 2/3 KTC4666 100 CIOLLECTOR POWER DISSIPATION PC (mW) C ob - V CB I E =0 f=1MHz Ta=25 C P C - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 175 COLLECTOR OUTPUT CAPACITANCE Cob (pF) 50 30 10 5 3 1 0.1 0.3 1 3 10 30 100 COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C) 2008. 8. 29 Revision No : 4 3/3