SEMICONDUCTOR
TECHNICAL DATA
LOW NOISE AMPLIFIER APPLICATION.
KTC4666
EPITAXIAL PLANAR NPN TRANSISTOR
FEATURE ・High hFE : hFE=600~3600. ・Noise Figure : 0.5dB(Typ.) at f=100kHz.
A J G
E M B M
2 1 3
D
DIM A
B C D E G H
MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10
0.3+0.10/-0.05 _ 2.10 + 0.20 0.65 0.15+0.1/-0.06 1.30 0.00-0.10 0.70 _ 0.42 + 0.10 0.10 MIN
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 60 50 8 150 30 200 150 -55~150 UNIT V V V mA mA mW ℃ ℃
1. EMITTER 2. BASE 3. COLLECTOR
C
H N K N
J K L M N
L
USM
* Package mounted on 99.5% alumina 10mm×8mm×0.6mm
Marking
h FE Rank
Lot No.
Type Name
T
MIN. 600 500 600 100 TYP. 0.05 0.07 0.12 250 3.5 0.5 0.3 MAX. 0.1 0.1 3600 3600 0.15 0.2 0.25 dB V V V MHz pF UNIT μ A μ A
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current SYMBOL ICBO IEBO hFE (1)(Note) DC Current Gain hFE (2) hFE (3) VCE(sat)(1) Collector-Emitter Saturation Voltage VCE(sat)(2) VCE(sat(3) Transition Frequency Collector Output Capacitance fT Cob NF (1) Noise Figure NF (2) Note : hFE Classification A:600~1800 , B:1200~3600 TEST CONDITION VCB=50V, IE=0 VEB=8V, IC=0 VCE=6V, IC=2mA VCE=5V, IC=1mA VCE=10V, IC=2mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=100mA, IB=10mA VCE=10V, IC=10mA VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, f=100kHz, Rg=10kΩ VCE=6V, IC=0.1mA, f=1kHz, Rg=10kΩ
2008. 8. 29
Revision No : 4
1/3
KTC4666
I C - V CE
160 COLLECTOR CURRENT I C (mA)
400 200 COMMON EMITTER Ta=25 C 100 80
h FE - I C
5k 3k DC CURRENT GAIN h FE 1k 500 300 100 50 30 10
COMMON EMITTER V CE =6V Ta=100 C Ta=25 C Ta=-25 C
120
80
40
60 50 40 30 20 I B =10µA 0
0 0 2 4
6
8
0.1
0.3
1
3
10
30
100
300
COLLECTOR EMITTER VOLTAGE V CE (V)
COLLECTOR CURRENT I C (mA)
VCE(sat) - I C
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA)
Ta=100 C Ta=25 C Ta=-25 C
VBE(sat) - I C
30 BASE-EMITTER SATURATION VOLTAGE V BE(sat) (V) 10 5 3 1 0.5 0.3 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA)
COMMON EMITTER I C /I B =10 Ta=25 C
COMMON EMITTER I C /I B =10
I C - V BE
TRANSITION FREQUENCY f T (MHz) 160 COLLECTOR CURRENT I C (mA)
COMMON EMITTER VCE =6V
fT - IE
5k 3k 1k 500 300 100 50 30 10 -0.1
VCC =10V Ta=25 C
120
Ta=100 C
80
40
0 0 0.4 0.8 1.2 1.6 BASE EMITTER VOLTAGE V BE (V)
Ta=-25 C
Ta=25 C
-0.3
-1
-3
-10
-30 -100
-300
EMITTER CURRENT I E (mA)
2008. 8. 29
Revision No : 4
2/3
KTC4666
100
CIOLLECTOR POWER DISSIPATION PC (mW)
C ob - V CB
I E =0 f=1MHz Ta=25 C
P C - Ta
250 200 150 100 50 0 0 25 50 75 100 125 150 175
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
50 30
10 5 3
1 0.1 0.3 1 3 10 30 100
COLLECTOR-BASE VOLTAGE VCB (V)
AMBIENT TEMPERATURE Ta ( C)
2008. 8. 29
Revision No : 4
3/3
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