KTC801E

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES A super-minimold package houses 2 transistor. High pairing property in hFE. The follwing characteristics are common for Q1, Q2. 3 KTC801E EPITAXIAL PLANAR NPN TRANSISTOR B B1 A1 Excellent temperature response between these 2 transistor. A C 1 6 5 2 4 P P DIM A A1 B B1 C D H J P MILLIMETERS _ 1.6 + 0.05 _ 1.0 + 0.05 _ 1.6 + 0.05 _ 1.2 + 0.05 0.50 _ 0.2 + 0.05 _ 0.5 + 0.05 _ 0.12 + 0.05 5 C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating SYMBOL VCBO VCEO VEBO IC IB PC * Tj Tstg RATING 60 50 5 150 30 200 150 -55 150 UNIT V V V mA mA mW 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR H MAXIMUM RATING (Ta=25 ) TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 J D Q2 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure ICBO IEBO ) TEST CONDITION VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2 IC=100 , IB=10 VCE=10V, IC=1 VCB=10V, IE=0, f=1 VCE=6V, IC=0.1 , f=1 , Rg=10 MIN. 120 80 TYP. 0.1 2 1.0 Type Name 6 5 4 SYMBOL MAX. 0.1 0.1 400 0.30 3.5 10 UNIT. hFE (Note) VCE(sat) fT Cob NF V Note : hFE Classification Y(4):120 240, GR(6):200 400 Marking L 1 2 3 hFE Rank 2003. 2. 25 Revision No : 1 1/3 KTC801E I C - VCE 240 COLLECTOR CURRENT I C (mA) 6.0mA 5.0mA COMMON EMITTER Ta=25 C 2.0mA h FE - I C 1k DC CURRENT GAIN h FE 500 300 Ta=100 C Ta=25 C Ta=-25 C VCE =6V COMMON EMITTER 200 160 120 80 40 0 3.0mA 1.0mA 0.5mA I B =0.2mA 0 100 50 30 VCE =1V 0 1 2 3 4 5 6 7 10 0.1 0.3 1 3 10 30 100 300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 1 0.5 0.3 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COMMON EMITTER I C /I B=10 VBE(sat) - I C 10 5 3 COMMON EMITTER I C /I B=10 Ta=25 C 0.1 0.05 0.03 = Ta 10 0 C 1 0.5 0.3 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 300 0.1 0.1 0.3 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA) fT - IC TRANSITION FREQUENCY f T (MHz) 3k 1k 500 300 100 50 30 10 COMMON EMITTER VCE =10V Ta=25 C I B - V BE 3k BASE CURRENT I B (µA) 1k 300 100 5C Ta=25 C COMMON EMITTER VCE =6V 30 10 3 1 Ta=1 00 C 0.1 0.3 1 3 10 30 100 300 0.3 0 0.2 0.4 Ta=2 0.6 0.8 1.0 1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) 2003. 2. 25 Revision No : 1 2/3 KTC801E COLLECTOR POWER DISSIPATION P C (mW) Pc - Ta 250 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE Ta ( C) 2003. 2. 25 Revision No : 1 3/3