SEMICONDUCTOR
KTC9012
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
B
C
FEATURES
A
・Excellent hFE Linearity.
・Complementary to KTC9013.
N
K
E
G
J
D
MAXIMUM RATING (Ta=25℃)
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-500
mA
Emitter Current
IE
500
mA
Collector Power Dissipation
PC
625
mW
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
H
F
F
1
2
3
C
RATING
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_ 0.50
14.00 +
0.55 MAX
2.30
0.45 MAX
1.00
M
SYMBOL
L
CHARACTERISTIC
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-35V, IE=0
-
-
-0.1
μA
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μA
64
-
246
-
-0.1
-0.25
V
-0.8
-1.0
V
150
-
-
MHz
-
7.0
-
pF
hFE (Note)
DC Current Gain
VCE=-1V, IC=-50mA
VCE(sat)
IC=-100mA, IB=-10mA
Base-Emitter Voltage
VBE
IC=-100mA, VCE=-1V
Transition Frequency
fT
Collector-Emitter Saturation Voltage
Cob
Collector Output Capacitance
Note : hFE Classification D:64~91,
2011. 4. 4
VCB=-6V, IC=-20mA, f=100MHz
E:78~112,
Revision No : 3
VCB=-6V, IE=0, f=1MHz
F:96~135,
G:118~166,
H:144~202,
I:176~246
1/1
KTC9012
hFE - IC
IC - VCE
(LOW VOLTAGE REGION)
-7 -6
-8
-500
-5
500
COMMON EMITTER
Ta=25 C
DC CURRENT GAIN hFE
-4
-400
-3
-300
-2
-200
IB =-1mA
-100
0
0
-2
-1
-3
-4
-5
Ta =25 C
Ta =-25 C
100
VCE =-1V
50
30
COMMON EMITTER
-1
-3
-10
-30
-100
-300
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
IB - VBE
-0.5
-1k
COMMON EMITTER
-0.3
I C /I B =10
-0.1
Ta =100 C
Ta =25 C
Ta =-25 C
-0.03
-0.01
-0.5 -1
-3
-10
-30
-100
-300
-1K
-1K
COMMON
EMITTER
VCE =-6V
-300
-100
-30
-10
-3
-1
-0.3
0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR CURRENT IC (mA)
COLLECTOR POWER DISSIPATION PC (mW)
VCE =-6V
COLLECTOR-EMITTER VOLTAGE VCE (V)
-0.05
2011. 4. 4
Ta =100 C
10
-0.3
BASE CURRENT IB (µA)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCE(sat) (V)
0
300
Ta =1
00 C
Ta =2
5 C
Ta =25 C
COLLECTOR CURRENT IC (mA)
-600
PC - Ta
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
Revision No : 3
2/2
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