KTC9012S-H-RTK/P

SEMICONDUCTOR KTC9012S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B L FEATURES L ・Excellent hFE Linearity. D ・Complementary to KTC9013S. H MAXIMUM RATING (Ta=25℃) 3 G A 2 1 Q UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Emitter Current IE 500 mA PC * 350 mW Tj 150 ℃ Tstg -55～150 ℃ Collector Power Dissipation Junction Temperature Storage Temperature Range P K J RATING C SYMBOL N P CHARACTERISTIC DIM A B C D E G H J K L M N P Q MILLIMETERS 2.93 +_ 0.20 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 * PC : Package Mounted On 99.5% Alumina (10×8×0.6㎜) Marking h FE Rank Type Name Lot No. BB ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-35V, IE=0 - - -0.1 μA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1 μA 96 - 246 - -0.1 -0.25 V -0.8 -1.0 V 150 - - MHz - 7.0 - pF hFE (Note) DC Current Gain VCE=-1V, IC=-50mA VCE(sat) IC=-100mA, IB=-10mA Base-Emitter Voltage VBE IC=-100mA, VCE=-1V Transition Frequency fT Collector-Emitter Saturation Voltage Cob Collector Output Capacitance Note : hFE Classification 2003. 3. 25 F:96～135, G:118～166, Revision No : 1 VCE=-6V, IC=-20mA, f=100MHz VCB=-6V, IE=0, f=1MHz H:144～202, I:176～246 1/2 KTC9012S I C - VCE (LOW VOLTAGE REGION) -7 -6 -8 -500 -5 -4 -400 -3 -300 -2 -200 IB =-1mA -100 300 Ta =100 C 0 -2 -1 -3 -4 VCE =-6V Ta =25 C Ta =-25 C 100 VCE =-1V 50 30 COMMON EMITTER 0 0 10 -0.3 -5 -1 -3 -10 -30 -100 -300 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C I B - VBE -1K -1k -0.5 COMMON EMITTER VCE =-6V COMMON EMITTER I C /I B =10 -0.1 Ta =100 C -0.05 Ta =25 C Ta =-25 C -0.03 -300 -100 Ta =1 00 C Ta =2 5 C Ta =25 C -0.3 BASE CURRENT I B (µA) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 500 COMMON EMITTER Ta=25 C DC CURRENT GAIN h FE COLLECTOR CURRENT I C (mA) -600 h FE - I C -30 -10 -3 -1 -0.3 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1K COLLECTOR CURRENT I C (mA) 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION Pc (mW) Pc - Ta 500 1 MOUNTED ON 99.5% ALUMINA 10x8x0.6mm 400 2 Ta=25 C 1 300 200 2 100 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2003. 3. 25 Revision No : 1 2/2