KTC9012_10

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B KTC9012 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES ・Complementary to KTC9013. N K D G E A ・Excellent hFE Linearity. MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING -40 -30 -5 -500 500 625 mW 400 150 -55～150 ℃ ℃ UNIT V V M H F F V mA mA L 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification D:64～91, SYMBOL ICBO IEBO hFE (Note) VCE(sat) VBE fT Cob E:78～112, TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-50mA IC=-100mA, IB=-10mA IC=-100mA, VCE=-1V VCB=-6V, IC=-20mA, f=100MHz VCB=-6V, IE=0, f=1MHz G:118～166, H:144～202, 150 I:176～246 MIN. 64 TYP. -0.1 -0.8 7.0 MAX. -0.1 -0.1 246 -0.25 -1.0 V V MHz pF UNIT μ A μ A F:96～135, 2010. 6. 25 Revision No : 2 1/1 KTC9012 IC - VCE (LOW VOLTAGE REGION) COLLECTOR CURRENT IC (mA) -600 -500 -400 -300 -200 -100 0 0 -8 -7 -6 -5 hFE - IC 500 DC CURRENT GAIN hFE COMMON EMITTER Ta=25 C -4 -3 -2 IB =-1mA 300 Ta =100 C Ta =25 C Ta =-25 C VCE =-6V 100 50 30 VCE =-1V COMMON EMITTER 0 -1 -2 -3 -4 -5 10 -0.3 -1 -3 -10 -30 -100 -300 -1K COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) VCE(sat) - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -0.5 -0.3 COMMON EMITTER I C /I B =10 IB - VBE -1k COMMON EMITTER VCE =-6V Ta =1 00 C Ta =2 5C Ta =25 C BASE CURRENT IB (µA) -300 -100 -30 -10 -3 -1 -0.3 0 -0.1 Ta =100 C Ta =25 C Ta =-25 C -0.05 -0.03 -0.01 -0.5 -1 -3 -10 -30 -100 -300 -1K -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT IC (mA) BASE-EMITTER VOLTAGE VBE (V) COLLECTOR POWER DISSIPATION PC (mW) PC - Ta 700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 Fe Cu AMBIENT TEMPERATURE Ta ( C) 2010. 6. 25 Revision No : 2 2/2