SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
B
KTC9013
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
・Complementary to KTC9012.
N K D G E A
・Excellent hFE Linearity.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING 40 30 5 500 -500 625 mW 400 150 -55~150 ℃ ℃ UNIT V V
M
H
F
F
V mA mA
L
1
2
3
C
DIM A B C D E F G H J K L M N
MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00
J
1. EMITTER 2. BASE 3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE Classification D:64~91, SYMBOL ICBO IEBO hFE (Note) VCE(sat) VBE fT Cob E:78~112, TEST CONDITION VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=50mA IC=100mA, IB=10mA IC=100mA, VCE=1V VCB=6V, IC=20mA, f=100MHz VCB=6V, IE=0, f=1MHz G:118~166, H:144~202, 140 I:176~246 MIN. 64 TYP. 0.1 0.8 7.0 MAX. 0.1 0.1 246 0.25 1.0 V V MHz pF UNIT μ A μ A
F:96~135,
2010. 6. 25
Revision No : 2
1/1
KTC9013
IC - VCE (LOW VOLTAGE REGION)
COLLECTOR CURRENT IC (mA)
500 400 300 200 100 0
6.0 4.0
hFE - IC
500
DC CURRENT GAIN hFE
COMMON EMITTER Ta=25 C 3.0 2.0
300
Ta =100 C
VCE =6V
100 50 30
Ta =25 C C Ta =-25
VCE =1V
1.0 0.5 I B =0.1mA
COMMON EMITTER
0
1
2
3
4
5
10
0.5
1
3
10
30
100
300
1K
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (mA)
VCE(sat) - IC
COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V)
1 0.5 0.3
COMMON EMITTER I C /I B =10
IB - VBE
2K
COMMON EMITTER VCE =6V
BASE CURRENT IB (µA)
1K 500 300 100 50 30 10 5 0
Ta = 100 C
5C Ta =2
0.1
Ta =100 C
0.05 0.03 0.5 1 3 10 30
Ta =25 C Ta =-25 C
100
300
1K
0.2
0.4
0.6
Ta =-2
5C
0.8
1.0
1.2
COLLECTOR CURRENT IC (mA)
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR POWER DISSIPATION PC (mW)
PC - Ta
700 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175
Fe Cu
AMBIENT TEMPERATURE Ta ( C)
2010. 6. 25
Revision No : 2
2/2
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