KTC9014_10

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ・Low Noise :NF=1dB(Typ.) at f=1kHz. ・Complementary to KTC9015. K D G E B KTC9014 EPITAXIAL PLANAR NPN TRANSISTOR C A N MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW SYMBOL VCBO VCEO VEBO IC IE PC* Tj Tstg RATING 60 50 5 150 -150 625 mW 400 150 -55～150 ℃ ℃ UNIT V V V mA mA L F H F M 1 2 3 C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J TO-92 ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Note : hFE Classification A:60～150, SYMBOL ICBO IEBO hFE (Note) VCE(sat) fT Cob NF B:100～300, TEST CONDITION VCB=50V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1mA IC=100mA, IB=10mA VCE=10V, IC=1mA, f=100MHz VCB=10V, IE=0, f=1MHz VCE=6V, IC=0.1mA, Rg=10kΩ, f=1kHz C:200～600, D:400～1000 MIN. 60 60 TYP. 0.1 2.0 1.0 MAX. 50 100 1000 0.25 3.5 10 V MHz pF dB UNIT nA nA 2010. 3. 22 Revision No : 1 1/1