KTD1047B

SEMICONDUCTOR TECHNICAL DATA HIGH POWER AMPLIFIER APPLICATION. FEATURES ・Complementary to KTB817B. ・Recommended for 60W Audio Frequency Amplifier Output Stage. H A N O KTD1047B TRIPLE DIFFUSED NPN TRANSISTOR Q B K MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Collector Power Dissipation (Tc=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 160 140 6 12 A 15 100 150 -55～150 W ℃ ℃ UNIT V V V D E d M P P T 1 2 3 DIM MILLIMETERS _ A 15.60 + 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 + 0.20 _ d 1.00 + 0.20 _ E 3.00 + 0.20 _ 3.80 + 0.20 F _ G 3.50 + 0.20 _ H 13.90 + 0.20 _ I 12.76 + 0.20 _ J 23.40 + 0.20 K 1.5+0.15-0.05 _ L 16.50 + 0.30 _ M 1.40 + 0.20 _ 13.60 + 0.20 N _ 9.60 + 0.20 O _ P 5.45 + 0.30 _ Q 3.20 + 0.10 _ R 18.70 + 0.20 0.60+0.15-0.05 T F C J G I 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER TO-3P(N)-E ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Output Capacitance Turn On Time Fall Time Storage Time SYMBOL ICBO IEBO hFE (1) (Note) hFE 2 VCE(sat) VBE(ON) fT Cob ton tf tstg TEST CONDITION VCB=80V, IE=0 VEB=4V, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=5A, IB=0.5A VCE=5V, IC=1A VCE=5V, IC=1A VCB=10V, IE=0, f=1MHz VCC=20V IC=1A=10・IB1=-10・IB2 RL=20Ω MIN. 60 20 TYP. 15 210 0.26 0.68 6.88 2.5 1.5 μ S V V MHz pF MAX. 0.1 0.1 200 UNIT mA mA Note : hFE(1) Classification O:60～120, Y:100～200 2011. 3. 18 Revision No : 0 L R 1/3 KTD1047B I C - V CE 10 COLLECTOR CURRENT IC (A) 8 6 4 2 0 0 10 20 30 40 240mA 200mA 160mA h FE - I C 1k 500 300 DC CURRENT h FE VCE =5V 120mA 80mA 100 50 30 10 5 3 1 40mA 20mA I B =0 50 0.1 0.3 1 3 10 30 100 COLLECTOR EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (A) VCE(sat) - I C COLLECTOR-EMITTER VOLTAGE VCE(sat) (V) 10 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.1 0.3 0.5 1 3 5 10 BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) IC /I B =10 V BE(sat) - I C 10 5 3 I C /I B =10 1 0.5 0.3 0.1 0.1 0.3 0.5 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) I C - VBE 8 COLLECTOR CURRENT I C (A) 7 6 5 4 3 2 1 0 0 0.4 0.8 1.2 1.6 VCE =5V f T - IC TRANSITION FREQUENCY f T (MHz) 100 VCE =5V 50 30 10 5 3 1 0.1 0.3 0.5 1 3 5 10 BASE-EMITTER VOLTAGE V BE (V) COLLECTOR CURRENT I C (A) 2011. 3. 18 Revision No : 0 2/3 KTD1047B C ob - V CB COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1k 500 300 COLLECTOR CURRENT I C (A) f=1MHz SAFE OPERATING AREA 100 50 30 S 1m S m 10 10 5 3 1 0.5 0.3 0.1 10 DC 0m S 100 50 30 10 1 3 10 30 100 COLLECTOR-BASE VOLTAGE V CB (V) 1 3 10 30 100 300 1k COLLECTOR-EMITTER VOLTAGE V CE (V) 2011. 3. 18 Revision No : 0 3/3