KTD1414

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. S KTD1414 EPITAXIAL PLANAR NPN TRANSISTOR A F C FEATURES High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A. E G B DIM A B C D E F G H J K L M N P Q R H S K L L R MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING 100 80 5 4 0.5 25 150 -55 150 UNIT V V V 1 2 3 N N D M D J MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q A A W 1. BASE 2. COLLECTOR 3. EMITTER Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range TO-220IS EQUIVALENT CIRCUIT COLLECTOR BASE _ ~ 4.5KΩ _ ~ 300Ω EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Turn-on Time Switching Time Storage Time Fall Time VBE(sat) ton tstg tf I B1 0 I B2 I B1 =-I B2 =6mA DUTY CYCLE 1% VCC =30V SYMBOL ICBO IEBO V(BR)CEO hFE(1) TEST CONDITION VCB=100V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=2V, IC=1A VCE=2V, IC=3A IC=3A, IB=6mA IC=3A, IB=6mA 20µsec INPUT I B1 I B2 OUTPUT 10Ω MIN. 80 2000 1000 - P TYP. 0.2 1.5 0.6 MAX. 20 2.5 1.5 UNIT A mA V VCE(sat) V 2.0 - S 2007. 5. 22 Revision No : 2 1/2 KTD1414 I C - V CE 4 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) COMMON EMITTER Tc=25 C 500 450 400 350 I C - V CE 4 COMMON EMITTER Tc=100 C 3 3 300 250 2 2 300 250 I B =200µA 0 200 175 1 1 150 I B =125µA 0 0 1 2 3 0 5 0 1 2 3 4 0 4 5 COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 4 COLLECTOR CURRENT I C (A) COMMON EMITTER Tc=-55 C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) I C - V CE VCE(sat) - I C 3 3 800 700 1 Tc=100 C Tc=25 C Tc=-55 C 2 600 500 0.5 0.3 0.2 COMMON EMITTER IC /I B =500 1 I B =400µA 0 0.5 1 3 5 0 0 1 2 3 4 5 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) SAFE OPERATING AREA 10 h FE - I C 10k DC CURRENT GAIN h FE 5k 3k = Tc C I C MAX.(PULSED) * COLLECTOR CURRENT I C (A) 5 3 I C MAX. (CONTINUOUS) S* 1m N S* IO AT 10m ER C OP =25 DC Tc 10 0 Tc 5 =2 5 =- C C 1 0.5 0.3 5 Tc 500 300 0.1 COMMON EMITTER VCE =2V 0.1 0.05 CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 0.3 0.5 1 3 5 10 1 3 10 30 100 VCEO MAX. 1k * SINGLE NONREPETITIVE PULSE Tc=25 C 300 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 2 2/2