KTD2066_07

SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT SWITCHING APPLICATION. LAMP SOLENOID DRIVER APPLICATION. A KTD2066 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES High DC Current Gain : hFE=500 1500(IC=1A). Low Collector Saturation Voltage : VCE(sat)=0.35V(Max.) (IC=3A). S E DIM A B C D E F G H J K L M N P Q R H S K L L R M D D J MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25 Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PC 30 Tj Tstg 150 -55 150 BASE RATING 100 80 7 5 UNIT V V 1 MILLIMETERS _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ Φ3.2 + 0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 + 0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ F N N G B 2 3 V A Q 1. BASE 2. COLLECTOR 3. EMITTER 8 TO-220IS 1 2 W A EQUIVALENT CIRCUIT COLLECTOR P EMITTER ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain hFE(2) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Emitter Forward Voltage Transition Frequency Collector Output Capacitance Turn-on Time Switching Time Storage Time Fall Time VCE(sat) VBE(sat) VECF fT Cob ton Tstg tf IB1 0 IB2 I B2 SYMBOL ICBO IEBO V(BR)CEO hFE(1) TEST CONDITION VCB=80V, IE=0 VEB=7V, IC=0 IC=50mA, IB=0 VCE=1V, IC=1A VCE=1V, IC=5A IC=3A, IB=0.03A IC=3A, IB=0.03A IE=3A, IB=0 VCE=5V, IC=1A VCE=10V, IE=0, f=1MHz OUTPUT 20µsec 30Ω INPUT I B1 MIN. 80 500 150 - TYP. 130 110 0.6 3.0 0.8 MAX. 10 10 1500 0.35 1.2 2.5 - UNIT A A V V V V MHz pF S IB1=-I B2 =10mA DUTY CYCLE < 1% VCC =30V 2007. 5. 22 Revision No : 2 1/2 KTD2066 h FE - I C 3k DC CURRENT GAIN h FE COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 2 1 0.5 0.3 VCE(sat) - I C COMMON EMITTER I C /IB =100 1k 500 300 VCE =2V VCE =1V VCE =5V Tc =1 00 C 0.1 0.05 Tc=25 C Tc=-55 C 100 COMMON EMITTER Tc=25 C 50 0.05 0.02 0.05 0.1 0.3 1 3 5 10 0.1 0.3 1 3 5 10 COLLECTOR CURRENT I C (A) COLLECTOR CURRENT I C (A) h FE - I C 3k COLLECTOR CURRENT I C (A) DC CURRENT GAIN h FE 8 20 14 I C - V CE COMMON EMITTER Ta=25 C 10 6 1k 500 300 Tc=100 C Tc=25 C Tc=-55 C 6 4 4 2 100 I B =2mA 0 COMMON EMITTER VCE =1V 50 0.05 0 1 3 5 10 0 4 8 0.1 0.3 12 16 20 COLLECTOR CURRENT I C (A) COLLECTOR-EMITTER VOLTAGE V CE (V) r th - t w TRANSIENT THERMAL RESISTANCE r th ( C/W) CURVES SHOULD BE APPLIED IN THERMAL LIMITED AREA. (SINGLE NONREPETITIVE PULSE) (1) NO HEAT SINK (2) INFINITE HEAT SINK (Tc=25 C) (1) SAFE OPERATING AREA 20 COLLECTOR CURRENT IC (A) 10 5 3 I C MAX.(PULSED) 10 S 0m 1m S 10 S 0µ 100 10 I C MAX. (CONTINUOUS) 10 mS IO AT ER C OP =25 c DC T 1 0.5 0.3 (2) 1 0.1 0.001 N 0.01 0.1 1 10 100 1k 0.1 0.05 0.02 1 PULSE WIDTH t w (S) 3 10 30 100 V CEO MAX. SINGLE NONREPETITIVE PULSE Tc=25 C CURVES MUST BE DERATED LINEARLY WITH INCREASE IN TEMPERATURE 200 COLLECTOR-EMITTER VOLTAGE V CE (V) 2007. 5. 22 Revision No : 2 2/2