SEMICONDUCT OR
TECHNICAL DATA
ULTRA-HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS FEATURES ・2.5 Gate Drive. ・Low Threshold Voltage : Vth=0.5~1.5V. ・High Speed. ・Small Package. ・Enhancement-Mode.
KTK5132S
N CHANNEL MOS FIELD EFFECT TRANSISTOR
L
E B
L
DIM A
D
B C D E G H J K P P L M N P
MILLIMETERS _ 2.93 + 0.20
1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
2
3
A
G H
1
Drain-Source Voltage Gate-Source Voltage DC Drain Current Drain Power Dissipation Channel Temperature Storage Temperature Range
VDS VGSS ID PD Tch Tstg
30 ±20 100 200 150 -55~150
V V mA mW ℃ ℃
1. SOURCE 2. GATE 3. DRAIN
K
CHARACTERISTIC
SYMBOL
RATING
UNIT
M
SOT-23
EQUIVALENT CIRCUIT
D
Marking
Lot No.
G
Type Name
KB
S
THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE. PLEASE HANDLE WITH CAUTION.
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC Gate Leakage Current Drain-Source Breakdown Voltage Drain Cut-off Current Gate Threshold Voltage Forward Transfer Admittance Drain-Source ON Resistance Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Time Turn-on Time Turn-off Time SYMBOL IGSS V(BR)DSS IDSS Vth |Yfs| RDS(ON) Ciss Crss Coss ton toff TEST CONDITION VGS=±16V, VDS=0V ID=100μ VGS=0V A, VDS=30V, VGS=0V VDS=3V, ID=0.1mA VDS=3V, ID=10mA ID=10mA, VGS=2.5V VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDS=3V, VGS=0V, f=1MHz VDD=5V, ID=10mA, VGS=0~5V MIN. 30 0.5 25 TYP. 4 8.5 3.3 9.3 50 180 MAX. ±1 1 1.5 7 UNIT μ A V μ A V mS Ω pF pF pF nS nS
2002. 6. 21
Revision No : 1
J
MAXIMUM RATING (Ta=25℃)
C
N
1/3
KTK5132S
I D - V DS I D - V DS
100 DRAIN CURRENT I D (mA) 80 60 40 20 0 0 2 4 6 8 10 12 DRAIN-SOURCE VOLTAGE V DS (V)
2.5V 2.2V COMMON SOURCE Ta=25 C
(LOW VOLTAGE REGION) 1.0 DRAIN CURRENT ID (mA) 0.8 0.6
1.1V 2.5V 1.2V 1.15V COMMON SOURCE Ta=25 C
2.0V 1.8V 1.6V 1.4V VGS =1.2V
0.4 0.2 0 0 0.1 0.2 0.3 0.4
1.05V 1.0V VGS =0.9V
0.5
0.6
DRAIN-SOURCE VOLTAGE V DS (V)
I DR - VDS
DRAIN REVERSE CURRENT I DR (mA) 100
VGS =0 Ta=25 C D G S I DR
I D - VGS
100 DRAIN CURRENT I D (mA) 30 10
C
30 10 3 1 0.3 0.1 0.03 0.01 0 -0.4 -0.8
COMMON SOURCE
COMMON SOURCE V DS =3V
3 1 0.3 0.1 0.03 0.01 0
Ta= 100
Ta=25 C Ta=-25 C
-1.2
-1.6
1
2
3
4
5
DRAIN-SOURCE VOTAGE V DS (V)
GATE-SOURCE VOTAGE VGS (V)
Y fs
FORWARD TRANSFER ADMITTANCE Y (mS) 300
COMMON SOURCE V DS =3V Ta=25 C
- ID
100 50 CAPACITANCE C (pF) 30
C oss C iss
C - V DS
COMMON SOURCE VGS =0 f=1MHz Ta=25 C
100 50 30
fs
10 5 3
C rss
10 5 1 3 5 10 30 50 100 DRAIN CURRENT I D (mA)
1 0.1
0.3 0.5
1
3
5
10
20
DRAIN-SOURCE VOLTAGE V DS (V)
2002. 6. 21
Revision No : 1
2/3
KTK5132S
VDS(ON) - I D
2 DRAIN-SOURCE ON VOLTAGE VDS(ON) (V) 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 1 3 5 10 30 50 100 10 1 3 5
COMMON SOURCE VGS =2.5V Ta=25 C
t - ID
1K SWITCHING TIME t (ns) 500 300
t on tr
100 50 30
50Ω 5V V IN 0 10µs ID VOUT RL
t off tf
VDD =5V D.U. < 1% = VIN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C
VDD
10
30
50
100
DRAIN CURRENT I D (mA)
DRAIN CURRENT I D (mA)
P D - Ta
DRAIN POWER DISSIPATION P D (mW) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C)
SWITCHING TIME TEST CIRCUIT
ID 5V VIN 0 10µs VIN RL 50Ω
VOUT
VDD =5V D.U. < 1% = V IN :t r , t f < 5ns (Z OUT =50Ω) COMMON SOURCE Ta=25 C
VIN
5V 10%
90%
0 V DD VOUT V DS (ON)
10% 90% tr t on t off tf
VDD
2002. 6. 21
Revision No : 1
3/3
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