KTK921U

SEMICONDUCTOR TECHNICAL DATA RF Switching for VCR/DVD/Set Top Box Tuner FEATURES Low loss at on state(Typ 1dB@1GHz) With built-in bias diode Gate 3.3V operating A J 1 M KTK921U N CHANNEL MOS FIELD EFFECT TRANSISTOR E B M 4 D 2 3 H N K N DIM A B C D E H J K L M N MILLIMETERS _ 2.00 + 0.20 _ 1.25 + 0.15 _ 0.90 + 0.10 0.3+0.10/-0.05 _ 2.10 + 0.20 0.15+0.1/-0.06 1.30 0.00 ~ 0.10 0.70 0.42 0.10 MIN C 1. Diode Cathode 2. FET Gate & Diode Anode 3. FET Drain 4. FET Source FET Maximum Ratings (Ta=25 CHARACTERISTIC Drain-Source-Voltage Drain-Gate-Voltage Source-Gate-Voltage Drain Current ) SYMBOL VDS VDG VSG ID 7 7 10 RATING 3 UNIT V V V mA L USQ EQUIVALENT CIRCUIT 4(S) 3(D) DIODE Maximum Ratings (Ta=25 CHARACTERISTIC Reverse Voltage Forword Current ) SYMBOL VR IF RATING 35 100 UNIT V mA 1(C) 2(G,A) Marking 4 3 Lot No. FET DIODE Maximum Ratings (Ta=25 CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL PC Tj Tstg RATING 200 150 -55~150 UNIT mW Type Name MC 1 2 2010. 2. 17 Revision No : 0 1/2 KTK921U FET ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate-Source Breakdown Voltage Gate-Source Pinch-off Voltage Drain-Source Leakage Current Gate Cut-off Current Drain-Source On-State Resistance SYMBOL V(BR)GSS VGS(OFF) IDSX IGSS RDS(ON) ) TEST CONDITIONS MIN -7 , IF=0, f 1GHz -30 -30 TYP -1.9 20 -1.3 -38 1 0.65 1 0.65 MAX -2.5 10 -100 25 -2.5 -3.5 dB dB dB dB dB dB pF pF pF pF UNIT V V A nA VDS=0, IGS=-0.1mA VDS=1V, ID=20 A VDS=2V, VGS=-3.3V VDS=0, VGS=-3.3V VGS=0, ID=1mA VSC=VDC=0, RS=RL=50 Loss(On-State) Note1 S21(ON) 2 VSC=VDC=0, RS=RL=50 VSC=VDC=0, RS=RL=75 , IF=0, f=1GHz , IF=0, f 1GHz VSC=VDC=3.3V, RS=RL=50 Isolation (Off-State) Note1 S21(OFF) 2 , IF=1mA, f 1GHz , IF=1mA, f= 1GHz , IF=1mA, f 1GHz VSC=VDC=3.3V, RS=RL=50 VSC=VDC=3.3V, RS=RL=75 Input Capacitance Note2 Cic VSC=VDC=5V, IF=1mA, f=1MHz VSC=VDC=0, IF=0, f=1MHz VSC=VDC=5V, IF=1mA, f=1MHz VSC=VDC=0, IF=0, f=1MHz Output Capacitance Note2 Coc Note : 1 IF=Diode Forward Current 2 Cic is the series connection of Csg and Cgc; Coc is the series connection of Cdg and Cgc; DIODE ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Reverse Voltage Total Capacitance Series Resistance Fig. S21(on) 2 S21(off) 2 ) TEST CONDITIONS MIN 35 TYP 0.7 0.5 MAX 0.85 0.1 1.2 0.9 V pF UNIT V SYMBOL VF IR VR CT rS IF=2mA VR=15V IR=1 VR=6V, f=1MHz IF=2mA, f=100MHz Test Circuit V 1nF 100kΩ On-State : V=0V Off-State : V=3.3V 47kΩ 50Ω Input 1nF 1nF 50Ω Output 4.7kΩ 100kΩ V 1nF 2010. 2. 17 Revision No : 0 2/2