KU068N03D

SEMICONDUCTOR TECHNICAL DATA General Description This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converter. KU068N03D N-Ch Trench MOSFET A C K D L FEATURES ・VDSS=30V, ID=68A. ・Low Drain to Source On-state Resistance. : RDS(ON)=6.8mΩ(Max.) @ VGS=10V : RDS(ON)=13.2mΩ(Max.) @ VGS=4.5V 1 2 3 B H G F F J E N M DIM MILLIMETERS _ A 6.60 + 0.20 _ 6.10 + 0.20 B _ 5.34 + 0.30 C _ D 0.70 + 0.20 _ E 2.70 + 0.15 _ 2.30 + 0.10 F 0.96 MAX G 0.90 MAX H _ 1.80 + 0.20 J _ 2.30 + 0.10 K _ 0.50 + 0.10 L _ M 0.50 + 0.10 0.70 MIN N 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Ta=25℃ Unless otherwise Noted) CHARACTERISTIC Drain to Source Voltage Gate to Source Voltage Drain Current DC@TC=25℃ (Note1) Pulsed Single Pulsed Avalanche Energy Drain Power Dissipation @TC=25℃ @Ta=25℃ (Note2) (Note3) (Note1) (Note2) Tj Tstg (Note1) (Note2) RthJC RthJA SYMBOL RATING VDSS VGSS ID IDP EAS PD 30 ±20 68 A 272 89 45 W 3.8 150 -55～150 2.8 40 ℃ ℃ ℃/W ℃/W mJ Type Name Lot No UNIT V V DPAK (1) Marking KU068N03 D Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Note 1) RthJC means that the infinite heat sink is mounted. Note 2) Surface Mounted on 1″ 1″ × Pad of 2 oz copper. Note 3) L=20μ IAS=68A, VDD=15V, VGS=10V, Starting Tj=25℃ H, PIN CONNECTION (TOP VIEW) D 2 2 1 1 3 3 G S 2010. 6. 16 Revision No : 0 1/4 KU068N03D ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC Static Drain to Source Breakdown Voltage Drain Cut-off Current Gate to Source Leakage Current Gate to Source Threshold Voltage Drain to Source On Resistance Forward Transconductance Dynamic Input Capacitance Ouput Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Source to Drain Diode Ratings Source to Drain Forward Voltage Reverse Recovery Time Reverse Recovered Charge VSD trr Qrr VGS=0V, IS=30A IS=30A, dI/dt=100A/μ s IS=30A, dI/dt=100A/μ s (Note4) 0.8 21.1 9.3 1.2 V ns nC VGS=10V VGS=4.5V Ciss Coss Crss Rg Qg Qg Qgs Qgd td(on) tr td(off) tf VDD=15V, VGS=10V ID=30A, RG=1.6Ω (Note4) VDS=15V, VGS=10V, ID=30A (Note4) f=1MHz VDS=15V, f=1MHz, VGS=0V 1265 266 198 2.9 29.9 16.6 4.6 7.2 8.4 13.0 32.2 9.2 nC ns Ω pF BVDSS IDSS IGSS Vth RDS(ON) gfs VGS=0V, ID=250μ A VGS=0V, VDS=30V VGS=±20V, VDS=0V VDS=VGS, ID=250μ A VGS=10V, ID=30A VGS=4.5V, ID=30A VDS=5V, ID=30A (Note4) (Note4) (Note4) 30 1.0 5.7 11.0 55 1 ±100 3.0 6.8 13.2 mΩ S V μ A nA V SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Note 4) Pulse Test : Pulse width