MPS651

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B MPS651 EPITAXIAL PLANAR NPN TRANSISTOR C FEATURES High Current : IC(Max.)=1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to MPS751. K D G N E A High Voltage : VCEO=60V(Min.). H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING 80 60 5 1 2 625 150 -55 150 UNIT L F F 1 2 3 V V V A mW M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 Collector Power Dissipation Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitanc Note : hFE(1) Classification ) TEST CONDITION VCB=50V, IE=0 VEB=4V, IC=0 VCE=2V, IC=50mA VCE=2V, IC=1A IC=1mA, IB=0 IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=10V, IC=50mA VCB=10V, IE=0, f=1MHz MIN. 100 30 60 TYP. 0.15 0.85 150 12 MAX. 100 100 320 0.5 1.2 V V V MHz pF UNIT nA nA ICBO IEBO hFE(1) hFE(2) V(BR)CEO VCE(sat) VBE(sat) fT Cob SYMBOL Y:100 200 , GR:160 320 1999. 11. 30 Revision No : 2 1/3 MPS651 I C - V CE COLLECTOR CURRENT I C (mA) 1k COLLECTOR CURRENT I C (mA) 10m A 8m A 6m A I C - V CE 1k 50m A 30m A 20m A 10mA 6mA 800 600 400 200 0 4mA 3mA 2mA 800 600 400 200 4mA 2mA 1mA I B =0mA I B =0mA 0 2 4 6 8 10 12 0 0 0.2 0.4 0.6 0.8 1.0 1.2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) h FE - I C COLLECTOR OUTPUT CAPACITANCE C ob (pF) 1k DC CURRENT GAIN h FE 500 300 VCE =2V COMMON EMITTER Ta=25 C C ob - V CB 100 50 30 COMMON EMITTER f=1MHz Ta=25 C 100 50 30 10 5 3 1 3 5 10 30 50 100 COLLECTOR-BASE VOLTAGE VCB (V) 10 1 3 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA) fT - IC COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) TRANSITION FREQUENCY fT (MHz) 300 COMMON EMITTER Ta=25 C VCE =10V VCE(sat) - I C 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 5 10 30 100 300 1k 3k COLLECTOR CURRENT I C (mA) I C /I B COMMON EMITTER Ta=25 C 100 50 30 =10 10 1 3 10 30 100 300 COLLECTOR CURRENT I C (mA) 1999. 11. 30 Revision No : 2 2/3 MPS651 SAFE OPERATING AREA COLLECTOR CURRENT IC (A) 1PULSE I CP I C MAX. DC 1s Pc - Ta COLLECTOR POWER DISSIPATION PC (mW) 100 1.2k 1k 800 600 400 200 0 0 20 40 60 80 100 120 140 160 AMBIENT TEMPERATURE Ta ( C) 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0.005 OP ec c se 1m ms 10 ec 10 ER 0m AT c se IO N 0.5 1 3 5 10 30 50 COLLECTOR-EMITTER VOLTAGE VCE (V) 1999. 11. 30 Revision No : 2 3/3