MPS751

SEMICONDUCTOR TECHNICAL DATA VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B MPS751 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES High Current : IC(Max.)=-1A. High Transition Frequency : fT=150MHz(Typ.). Wide Area of Safe Operation. Complementary to MPS651. K D E G N A High Voltage : VCEO=-60V(Min.). H MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage DC Collector Current Pulse Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC ICP PC Tj Tstg RATING -80 -60 -5 -1 A -2 625 150 -55 150 mW UNIT L F F 1 2 3 V V V M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitanc Note : hFE(1) Classification 0:60 120 , Y:100 ) TEST CONDITION VCB=-50V, IE=0 VEB=-4V, IC=0 VCE=-2V, IC=-50mA VCE=-2V, IC=-1A IC=-1mA, IB=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA VCB=-10V, IE=0, f=1MHz MIN. 60 30 60 TYP. -0.2 -0.85 150 12 MAX. -100 -100 200 -0.7 -1.2 V V V MHz pF UNIT nA nA SYMBOL ICBO IEBO hFE(1) hFE(2) V(BR)CEO VCE(sat) VBE(sat) fT Cob 200 1999. 11. 30 Revision No : 2 1/3 MPS751 1999. 11. 30 Revision No : 2 2/3 MPS751 1999. 11. 30 Revision No : 2 3/3