SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION. FEATURE
Complementary to MPS8050S.
L
MPS8550S
EPITAXIAL PLANAR PNP TRANSISTOR
E B
L
2
3
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
)
SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg RATING -40 -25 -6 -1.5 350 150 -55 150 0.6 ) UNIT V
1
P
P
N
C
V V A mW
DIM A B C D E G H J K L M N P
MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
A
G
H
M
1. EMITTER 2. BASE 3. COLLECTOR
* PC : Package Mounted On 99.5% Alumina (10 8
K
SOT-23
Marking
h FE Rank Lot No.
Type Name
BJ
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage
)
SYMBOL ICBO IEBO V(BR)CBO V(BR)CEO hFE(1) TEST CONDITION VCB=-35V, IE=0 VEB=-6V, IC=0 IC=-100 A, IE=0 IC=-2mA, IB=0 VCE=-1V, IC=-5mA VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCE=-10V, IC=-50mA VCB=-10V, f=1MHz, IE=0 300 MIN. -40 -25 45 85 40 100 TYP. 170 160 80 -0.28 -0.98 -0.66 200 15 MAX. -100 -100 300 -0.5 -1.2 -1.0 V V V MHz pF UNIT nA nA V V
DC Current Gain
hFE(2) (Note) hFE(3)
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance Note : hFE(2) Classification
VCE(sat) VBE(sat) VBE fT Cob
B:85 160 , C : 120 200 , D : 160
2003. 3. 25
Revision No : 1
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D
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MPS8550S
I C - VCE
-0.5 COLLECTOR CURRENT IC (mA)
I B =-4.0mA
h FE - I C
1k DC CURRENT GAIN h FE
VCE =-1V
-0.4 -0.3 -0.2 -0.1 0
I B =-3.5mA I B =-3.0mA I B =-2.5mA I B =-2.0mA I B =-1.5mA I B =-1.0mA I B =-0.5mA
500 300
100 50 30
0
-0.4
-0.8
-1.2
-1.6
-2.0
10 -0.1
-0.3
-1
-3
-10
-30
-100
-300 -1K
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT I C (mA)
I C - VBE
-100 COLLECTOR CURRENT I C (mA) -50 -30 -10 -5 -3 -1 -0.5 -0.3 -0.1 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 BASE-EMITTER VOLTAGE VBE (V)
VCE =-1V
V BE(sat), VCE(sat) - I C
-5k -3k SATURATION VOLTAGE V BE(sat), VCE(sat) (mV) -1k -500 -300 -100 -50 -30 -10 -0.1
VCE (sat) VBE (sat) IC =10I B
-0.3
-1
-3
-10
-30 -100 -300 -1K
COLLECTOR CURRENT IC (mA)
fT - IC
COLLECTOR OUTPUT CAPACITANCE Cob (pF) TRANSITION FREQUENCY f T (MHz) 300
V CE =-10V
C ob - VCB
100 50 30
f=1MHz I E =0
100 50 30
10 5 3
10 -1 -3 -5 -10 -30 -50 -100 -300 COLLECTOR CURRENT I C (mA)
1 -1 -3 -5 -10 -30 -50 COLLECTOR-BASE VOLTAGE VCB (V)
2003. 3. 25
Revision No : 1
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