MPSA56_99

SEMICONDUCTOR TECHNICAL DATA AUDIO FREQUENCY AMPLIFIER APPLICATIONS. B MPSA56 EPITAXIAL PLANAR PNP TRANSISTOR C FEATURES A Complementary to MPSA06. N K E G MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature ) SYMBOL VCBO VCEO VEBO IC IE PC Tj Tstg RATING -80 -80 -5 -500 500 625 150 -55 150 UNIT V D H V V mA mA mW L F F 1 2 3 M C DIM A B C D E F G H J K L M N MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 14.00 + 0.50 0.55 MAX 2.30 0.45 MAX 1.00 J 1. EMITTER 2. BASE 3. COLLECTOR TO-92 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency ) TEST CONDITION VCB=-80V, IE=0 VCE=-60V, IB=0 IC=-1mA, IB=0 VCE=-1V, IC=-10mA VCE=-1V, IC=-100mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-1V, IE=0, IC=-100mA MIN. -80 100 100 50 TYP. MAX. -100 -100 -0.25 -1.2 V V MHz UNIT nA nA V ICBO ICEO SYMBOL V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE fT 1999. 11. 30 Revision No : 3 1/1