SMAZ36V

SEMICONDUCTOR TECHNICAL DATA Voltage regulation and voltage limiting. Voltage surge absorption. FEATURES ・Small surface mounting type. SMAZ3.6V~SMAZ36V ZENER DIODE SILICON PLANAR DIODE 2 H A D 1 MAXIMUM RATING (Ta=25℃) CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL PD Tj Tstg RATING 1 150 -55～150 UNIT C B ℃ G ℃ 1. ANODE 2. CATHODE SMA Marking Type Name Lot No. Type No. SMAZ3.6V SMAZ3.9V SMAZ4.3V SMAZ4.7V SMAZ5.1V SMAZ5.6V SMAZ6.2V SMAZ6.8V SMAZ7.5V Mark Z3.6 Z3.9 Z4.3 Z4.7 Z5.1 Z5.6 Z6.2 Z6.8 Z7.5 Type No. SMAZ8.2V SMAZ9.1V SMAZ10V SMAZ11V SMAZ12V SMAZ13V SMAZ15V SMAZ16V SMAZ18V Mark Z8.2 Z9.1 Z10 Z11 Z12 Z13 Z15 Z16 Z18 Type No. SMAZ20V SMAZ22V SMAZ24V SMAZ27V SMAZ30V SMAZ33V SMAZ36V - F W DIM A B C D E F G H MILLIMETERS _ 4.5 + 0.2 _ 2.6 + 0.2 _ 1.5 + 0.2 _ 5.0 + 0.3 _ 1.2 + 0.3 _ 2.0 + 0.2 0 ~ 0.15 R 0.5 Mark Z20 Z22 Z24 Z27 Z30 Z33 Z36 - 2005. 8. 16 Revision No : 0 E E 1/3 SMAZ3.6V~SMAZ36V ELECTRICAL CHARACTERISTICS (Ta=25℃) Zener Voltage Vz (V) TYPE No. Min. SMAZ3.6V SMAZ3.9V SMAZ4.3V SMAZ4.7V SMAZ5.1V SMAZ5.6V SMAZ6.2V SMAZ6.8V SMAZ7.5V SMAZ8.2V SMAZ9.1V SMAZ10V SMAZ11V SMAZ12V SMAZ13V SMAZ15V SMAZ16V SMAZ18V SMAZ20V SMAZ22V SMAZ24V SMAZ27V SMAZ30V SMAZ33V SMAZ36V 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.3 14.7 16.2 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 Max. 4.0 4.4 4.8 5.2 5.7 6.3 7.0 7.7 8.4 9.3 10.2 11.2 12.3 13.5 15.0 16.5 18.3 20.3 22.4 24.5 27.6 30.8 34.0 37.0 40.0 Iz (mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Dynamic Impedance Zz (Ω) Max. 15 15 15 10 8 8 6 6 4 4 6 6 8 8 10 10 12 12 14 14 16 16 18 18 20 IZ(mA) 40 40 40 40 40 40 40 40 40 40 40 40 20 20 20 20 20 20 20 10 10 10 10 10 10 Reverse Current IR (μ A) Max. 20 20 20 20 20 20 20 20 20 20 20 10 10 10 10 10 10 10 10 10 10 10 10 10 10 VR(V) 1.0 1.0 1.0 1.0 1.0 1.5 3.0 3.5 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 15.0 17.0 19.0 21.0 23.0 25.0 27.0 (Note 1) The Zener voltage is measured 40ms after power is supplied. (Note 2) The Dynamic Impedance(ZZ) are measured by superimposing a minute altemating current on the regulated current(IZ). 2005. 8. 16 Revision No : 0 2/3 SMAZ3.6V~SMAZ36V Pd - Ta POWER DISSIPATION Pd (mW) 1200 Glass epoxy substrate 32X30X1.6(mm) 1000 800 600 400 200 0 0 25 50 87.5 Ceramic substrate 82X30X1.0(mm) Individual part (not mounted) 100 150 200 AMBIENT TEMPERATURE Ta ( C) IZ - VZ 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 27 24 30 100m 33 ZENER CURRENT IZ (mA) 11 12 13 15 10m 1m 100µ 10µ 1µ 0 16 18 5 10 15 20 20 22 25 30 35 36 40 ZENER VOLTAGE VZ (V) 2005. 8. 16 Revision No : 0 3/3