2PD601AW

S MD Type NPN General Purpose Transistor 2PD601AW Transistors Features High collector current (max. 100 mA) Low collector-emitter saturation voltage (max. 500 mV). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Symbol VCBO VCEO VEBO IC ICM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 6 100 200 200 -65 to +150 150 -65 to +150 625 K/W Unit V V V mA mA mW www.kexin.com.cn 1 SMD Type 2PD601AW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Symbol ICBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 Emitter cut-off current DC current gain 2PD601AQW 2PD601ARW 2PD601ASW Collector-emitter saturation voltage Collector capacitance Transition frequency 2PD601AQW 2PD601ARW 2PD601ASW * Pulse test: tp 300 ìs; ä 0.02. IEBO IC = 0; VEB = 5 V Transistors Min Typ Max 10 5 10 Unit nA ìA nA hFE IC = 2 mA; VCE = 10 V 160 210 290 260 340 460 500 3.5 mV pF VCE(sat) IC = 100 mA; IB = 10 mA; * Cc IE = ie = 0; VCB = 10 V; f = 1 MHz 100 120 140 fT IC = 2 mA; VCE = 10 V;f = 100 MHz MHz hFE Classification TYPE Marking 2PD601AQW 6D 2PD601ARW 2PD601ASW 6E 6F 2 www.kesenes.com