2SA1052

SMD S MD Type Silicon PNP Epitaxial 2SA1052 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Low frequency amplifier 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Rating -30 -30 -5 -100 100 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Symbol Testconditons Min -30 -30 -5 -0.5 -0.5 100 500 -0.2 -0.75 V V Typ Max Unit V V V mA mA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCB = -20 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA VCE(sat) IC = -10 mA, IB = -1 mA VBE VCE = -12 V, IC = -2 mA hFE Classification Marking hFE MB 100 200 MC 160 320 MD 250 500 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1