2SC3739

SMD S MD Type NPN Silicon Epitaxia 2SC3739 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High gain bandwidth product: fT=200MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating 60 40 5 500 200 Unit V V V mA mW Junction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 40V, IE=0 VEB = 4V, IC=0 VCE = 1V , IC = 150mA 75 150 0.25 1.0 200 400 3.5 8.0 35 225 275 Min Typ Max 100 100 300 0.75 1.2 V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA fT Cob ton tstg toff VCE = 10V , IE = -20mA VCB = 10V , IE = 0 , f = 1.0MHz VCC = 30V , IC = 150mA , IB1 = -IB2 = 15mA hFE Classification Marking hFE B12 75 150 B13 100 200 B14 150 300 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1