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2SC4598

2SC4598

  • 厂商:

    KEXIN(科信)

  • 封装:

  • 描述:

    2SC4598 - NPN Triple Diffused Planar Silicon Transistor - Guangdong Kexin Industrial Co.,Ltd

  • 数据手册
  • 价格&库存
2SC4598 数据手册
S MD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4598 TO-263 Features Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4598-applied equipment. + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 High density surface mount applications. Small size of 2SC4598-applied equipment. High breakdown voltage, high reliability. +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 Wide ASO. Adoption of MBIT process. +0.2 2.54-0.2 2.54 5.08 +0.1 -0.1 + .2 2 .5 4 -00.2 Fast switching speed. + .2 5 .2 8 -00.2 + .2 1 5 .2 5 -00.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) * Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range * PW 300ms, duty cycle 10% Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 500 400 7 7 14 3 1.65 50 150 -55 to +150 A W Unit V V V A 5 .6 0 1,Base 2,Collector 3,Emitter www.kexin.com.cn 1 SMD Type 2SC4598 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Symbol ICBO IEBO Testconditons VCB = 400 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.8A DC current gain hFE VCE = 5 V, IC = 4A VCE = 5 V, IC =10mA Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON time Storage time Fall time fT Cob VCE (sat) VBE (sat) V (BR) CBO V (BR) CEO V(BR)EBO VCEX(SUS) ton tstg tf IC=3A,IB1=0.6A,IB2=-1.2A,RL=66.6 Ù,VCC=200V VCE = 10 V, IC =0.8A VCB=10V,f=1MHz IC = 4 A, IB = 0.8 A IC = 4 A, IB = 0.8 A IC = 1 mA, IE = 0 IC = 5 mA,RBE= IE=1mA,IC=0 IC=3A,IB1=0.3A,L=1mH,IB2=-1.2A 15 10 10 Transistors Min Typ Max 10 10 50 Unit ìA ìA 20 80 0.8 1.5 500 400 7 400 0.5 2.5 0.3 MHz pF V V V V V V ìs Switching Time Test Circuit hFE Classification Rank hFE L 15 to 30 M 20 to 40 N 30 to 50 2 www.kexin.com.cn
2SC4598 价格&库存

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