S MD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor 2SC4598
TO-263
Features
Surface mount type device making the following possible. Reduction in the number of manufacturing processes for 2SC4598-applied equipment.
+ .2 8 .7 -00.2 + .1 1 .2 7 -00.1
Unit: mm
+0.1 1.27-0.1 +0.2 4.57-0.2
High density surface mount applications. Small size of 2SC4598-applied equipment. High breakdown voltage, high reliability.
+0.1 1.27-0.1
0.1max
+0.1 0.81-0.1
Wide ASO. Adoption of MBIT process.
+0.2 2.54-0.2
2.54 5.08
+0.1 -0.1
+ .2 2 .5 4 -00.2
Fast switching speed.
+ .2 5 .2 8 -00.2
+ .2 1 5 .2 5 -00.2
+0.2 0.4-0.2
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) * Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range * PW 300ms, duty cycle 10% Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 500 400 7 7 14 3 1.65 50 150 -55 to +150 A W Unit V V V A
5 .6 0
1,Base 2,Collector 3,Emitter
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1
SMD Type
2SC4598
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current Symbol ICBO IEBO Testconditons VCB = 400 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.8A DC current gain hFE VCE = 5 V, IC = 4A VCE = 5 V, IC =10mA Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON time Storage time Fall time fT Cob VCE (sat) VBE (sat) V (BR) CBO V (BR) CEO V(BR)EBO VCEX(SUS) ton tstg tf IC=3A,IB1=0.6A,IB2=-1.2A,RL=66.6 Ù,VCC=200V VCE = 10 V, IC =0.8A VCB=10V,f=1MHz IC = 4 A, IB = 0.8 A IC = 4 A, IB = 0.8 A IC = 1 mA, IE = 0 IC = 5 mA,RBE= IE=1mA,IC=0 IC=3A,IB1=0.3A,L=1mH,IB2=-1.2A 15 10 10
Transistors
Min
Typ
Max 10 10 50
Unit ìA ìA
20 80 0.8 1.5 500 400 7 400 0.5 2.5 0.3
MHz pF V V V V V V
ìs
Switching Time Test Circuit
hFE Classification
Rank hFE L 15 to 30 M 20 to 40 N 30 to 50
2
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