2SC5585

S MD Type Low Frequency Transistor 2SC5585 Transistors SOT-523 +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 Unit: mm +0.01 0.1-0.01 2 1 +0.15 1.6-0.15 Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 0.35 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 15 12 6 500 150 150 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collectoe-emitter brakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector emitter saturation voltage Collector output capacitance Transition frequency Symbol VCBO VCEO VEBO ICBO IEBO hFE VCE(sat) cob fT IC = 10 IC = 1mA IE = 10 A A Testconditons Min 15 12 6 100 100 270 90 7.5 320 680 250 mV pF MHz Typ Max Unit V V V nA nA VCB=15 V VEB= 6 V VCE= 2 V, IC = 10mA IC=200mA,IB=10mA VCB=10V,IE=0,f=1MHz VCE = 2V, IE =-10mA,f=100MHz Marking Marking BX +0.05 0.8-0.05 Hig current. 0.55 Features www.kexin.com.cn 1