S MD Type
NPN Silicon Epitaxial Transistor 2SD1007
Transistors
Features
High collector to emitter voltage: VCEO 120V.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) * Collector power dissipation Junction temperature Storage temperature *. PW 10ms,duty cycle 50% Symbol VCBO VCEO VEBO IC IC (pu) Pc Tj Tstg Rating 120 120 5 0.7 1.2 2 150 -55 to +150 Unit V V V A A W
Electrical Characteristics Ta = 25
Parameter Base-emitter voltage * Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Output capacitance Transition frequency *. PW 350ìs,duty cycle 2% Symbol VBE ICBO IEBO hFE Testconditons VCE =10V , IC = 10mA VCB = 120V, IE=0 VEB = 5V, IC=0 VCE =1V , IC = 5.0mA VCE =1V , IC = 100mA VCE(sat) IC = 500mA , IB = 50mA VBE(sat) IC = 500mA , IB = 50mA Cob fT VCB = 10V , IE = 0 , f = 1.0MHz VCE = 10V , IE = -10mA 45 90 200 200 0.3 0.9 10 90 400 0.6 1.5 V V pF MHz Min 550 Typ 620 Max 650 100 100 Unit mV nA nA
hFE Classification
Marking hFE HR 90 180 HQ 135 270 HP 200 400
www.kexin.com.cn
1
很抱歉,暂时无法提供与“2SD1007”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 5+0.36551
- 20+0.33326
- 100+0.30101
- 500+0.26876
- 1000+0.25371
- 2000+0.24296
- 国内价格
- 1+0.36
- 100+0.336
- 300+0.312
- 500+0.288
- 2000+0.276
- 5000+0.2688