2SD1611

S MD Type Transistors Silicon NPN Triple Diffusion Planar Type Darlington 2SD1611 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 Features +0.2 9.70 -0.2 High forward current transfer ratio hFE High collector-base voltage (Emitter open) VCBO +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Internal Connection Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating 500 400 5 6 10 40 1.3 150 -55 to +150 Unit V V V A A A W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SD1611 Electrical Characteristics Ta = 25 Parameter Emitter-base voltage (Collector open) Collector-emitter sustaining voltage* Collector-base cutoff current (Emitter open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency *. VCEO(SUS) Test circuit Symbol VEBO VCEO(SUS) ICBO hFE VCE(sat) VBE(sat) fT Testconditons IE = 0.1 A, IC = 0 IC = 2 A, L = 10 mH VCB = 350 V, IE = 0 VCE = 2 V, IC = 2 A IC = 3 A, IB = 0.06 A IC = 3 A, IB = 0.06 A VCE = 10 V, IC = 1 A, f = 1 MHz 500 Min 5 400 Transistors Typ Max Unit V V 100 ìA 1.5 2.5 15 V V MHz 2 www.kexin.com.cn