2SD1719

S MD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD1719 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 Features +0.2 9.70 -0.2 High forward current transfer ratio hFE which has satisfactory linearity High emitter-base voltage (Collector open) VEBO +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 60 15 6 12 3 40 1.3 150 -55 to +150 Unit V V V A A A W W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Collector-base cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol VCEO ICBO IEBO hFE Testconditons IC = 25 mA, IB = 0 VCB = 100 V,IE = 0 VEB = 15 V, IC = 0 VCE = 4 V, IC = 1 A 300 Min 60 100 100 2000 0.5 30 0.3 IC = 5 A,IB1 = -IB2 = 0.1 A, VCC = 50V 1.5 0.6 V MHz ìs ìs ìs Typ Max Unit V ìA ìA VCE(sat) IC = 5 A, IB = 0.1 A fT ton tstg tf VCE = 12 V, IC = 0.5 A , f = 10 MHz hFE Classification Rank hFE Q 300 1200 P 800 2000 3 .8 0 www.kexin.com.cn 1