SMD S MD Type
Power Transistor 2SD1757K
Features
Low VCE(sat). (Typ.8mV at IC/IB = 10/1mA). Optimal for muting.
+0.1 2.4-0.1
Transistors IC
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 1.3-0.1
1
+0.1 0.95-0.1 +0.1 1.9-0.1
2
0.55
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current * Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 30 15 6.5 0.5 0.2 150 -55 to +150 Unit V V V A W
Electrical Characteristics Ta = 25
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=50ìA IC=1mA IE=50ìA VCB=20V VEB=4V 0.1 120 150 15 Testconditons Min 30 15 6.5 0.5 0.5 0.4 560 MHz pF Typ Max Unit V V V ìA ìA V
VCE(sat) IC/IB=500mA/50mA hFE fT Cob VCE=3V, IC=100mA VCE=5V, IE= -50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
hFE Classification
Marking Rank hFE Q 120 270 AA R 180 390 S 270 560
+0.1 0.38-0.1
0-0.1
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