2SD2121S

S MD Type Silicon NPN Epitaxial 2SD2121S TO-252 Transistors Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features Low frequency power amplifier. +0.15 1.50 -0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature TC = 25 Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 35 35 5 2.5 3 18 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio * Base to emitter voltage * Collector to emitter saturation voltage * * Pulse test. Symbol Testconditons Min 35 35 5 20 60 20 1.5 1.0 V V 320 Typ Max Unit V V V ìA V(BR)CBO IC = 1 mA, IE = 0 V(BR)CEO IC = 10 mA, RBE = V(BR)EBO IE = 1 mA, IC = 0 ICBO hFE VBE VCB = 35 V, IE = 0 VCE = 2 V,IC = 0.5 A VCE = 2 V,IC = 1.5 A VCE = 2 V,IC = 1.5 A VCE(sat) IC = 2 A,IB = 0.2 A hFE Classification Marking hFE B 60 120 C 100 200 D 160 320 3 .8 0 www.kexin.com.cn 1