2SD2453

S MD Type Transistors Silicon NPN Triple Diffusion Planar Type 2SD2453 TO-252 +0.15 1.50 -0.15 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High forward current transfer ratio hFE. Low collector-emitter saturation voltage VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Base current Collector power dissipation Ta = 25 Tc = 25 Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 2 4 1 1 10 150 -55 to +150 Unit V V V A A A W W Electrical Characteristics Ta = 25 Parameter Collector-emitter voltage Collector-base cutoff curent Collector cutoff curent Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE Testconditons IC = 25mA, IB = 0 VCB = 80 V,IE = 0 VCE = 40 V,IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A 500 Min 60 100 100 100 2500 1 50 V MHz Typ Max Unit V ìA ìA ìA VCE(sat) IC = 2 A, IB = 0.05 A fT VCE = 12 V, IC = 0.2 A , f = 10 MHz hFE Classification Rank hFE Q 500 1000 R 800 1500 S 1200 2500 3 .8 0 www.kexin.com.cn 1