2SD999

S MD Type NPN Silicon Epitaxial Transistor 2SD999 Transistors Features World standard miniature package:SOT-89. Low collector saturation voltage. Excellent dc current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector Current (pulse) * Total power dissipation Junction temperature Storage temperature * Pulse Test PW 10ms, Duty Cycle 50%. Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating 30 25 5 1 1.5 2.0 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage * Base saturation voltage * Base-emitter voltage * Gain bandwidth product Output capacitance * Pulsed: PW 350 ìs, duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = 30 V, IE = 0 A VEB = 5.0 V, IC = 0 A VCE = 1.0 V, IC = 100 mA VCE = 1.0 V, IC = 1.0A VCE(sat) IC = 1.0 A, IB = 0.1A VBE(sat) IC = 1.0 A, IB = 0.1A VBE fT Cob VCE = 6.0 V, IC = 10 mA VCE = 6.0 V, IE = -10 mA VCB = 6 V, IE = 0, f = 1.0 MHz 600 90 50 200 140 0.21 1 630 130 22 0.4 1.2 700 V V mV MHz pF Min Typ Max 100 100 400 Unit nA nA hFE Classification Marking hFE CM 90 180 CL 135 270 CK 200 400 www.kexin.com.cn 1