2SJ212

S MD Type MOS Fied Effect Transistor 2SJ212 SOT-89 +0.1 4.50-0.1 MOSFET Unit: mm +0.1 1.50-0.1 Features Directly driven by Ics having a 5V poer supply. Has low on-state resistance RDS(on)=4.0 RDS(on)=3.0 MAX.@VGS=-4.0V,ID=-0.3A MAX.@VGS=-1.0V,ID=-0.5A +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 ms; d 50%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 20 500 1.0 2.0 150 -55 to +150 Unit V V mA A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 20V,VDS=0 -1.0 0.4 -2.2 0.54 1.5 0.8 160 VDS=-5.0V,VGS=0,f=1MHZ 100 25 130 VGS(on)=-4V,RG=10 0.3A RL=1.5 ,VDD=-5V,ID=-380 95 140 4.0 3.0 pF pF pF ns ns ns ns Min Typ Max -10 10 -3.0 Unit A A V s VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-5.0V,ID=-0.3A VGS=-4.0V,ID=-0.3A VGS=-10V,ID=-0.5A Marking Marking PD www.kexin.com.cn 1