2SJ288

S MD Type P-Channel MOS Silicon FET 2SJ288 SOT-89 +0.1 4.50-0.1 MOSFET Unit: mm +0.1 1.50-0.1 Features Low on resistance Very high-speed switching Low-voltage drive +0.1 1.80-0.1 +0.1 2.50-0.1 1 +0.1 0.48-0.1 2 3 +0.1 0.80-0.1 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage VGS=0 Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s; d 1%. VDS=0 Symbol VDSS VGSS ID ID PD Tch Tstg Rating -60 15 -500 -2 3.5 150 -55 to +150 Unit V V mA A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut-off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS Testconditons VDS=-60V,VGS=0 VGS= 12V,VDS=0 -1.0 240 400 2.2 3.0 45 VDS=-20V,VGS=0,f=1MHZ 20 5 7 VDD=-30V,ID=--250mA RL=120 10 35 20 3.0 4.0 pF pF pF ns ns ns ns Min Typ Max -100 10 -2.0 Unit A A V ms VGS(off) VDS=-10V,ID=-1mA Yfs RDS(on) Ciss Coss Crss td(on) tr td(off) tf VDS=-10V,ID=-250mA VGS=-10V,ID=-250mA VGS=-4V,ID=-250mA Marking Marking JE www.kexin.com.cn 1