2SK1152S

S MD SMD Type Silicon N-Channel MOSFET 2SK1152S IC MOSFET TO-252 +0.15 1.50-0.15 Features Low on-resistance High speed switching +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.15 6.50-0.15 +0.2 5.30-0.2 No secondary breakdown Suitable for switching regulator and DC-DC converter +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 Low drive current 1 Gate 2 Drain 3 Source 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD Tch Tstg Rating 500 30 1.5 6 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off current Gate leakage current Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Testconditons ID=10mA,VGS=0 ID= 100 A,VDS=0 Min 500 30 100 10 2.0 0.6 1.1 4.0 160 VDS=10V,VGS=0,f=1MHZ 45 5 5 ID=1A,VGS(on)=0,RL=30 10 20 10 6.0 pF pF pF ns ns ns ns 3.0 Typ Max Unit V V A A V s VDS=400V,VGS=0 VGS= 25V,VDS=0 VGS(off) VDS=10V,ID=1mA Yfs VDS=20V,ID=1A RDS(on) VGS=10V,ID=1A Ciss Coss Crss td(on) tr td(off) tf 3.80 www.kexin.com.cn 1