2SK1880S

S MD SMD Type Silicon N-Channel MOSFET 2SK1880S IC MOSFET Features Low on-resistance High speed switching No secondary breakdown +0.2 9.70-0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm +0.1 0.80-0.1 +0.15 0.50-0.15 0.127 max +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID PD Tch Tstg Rating 600 30 1.5 20 150 -55 to +150 Unit V V A W Electrical Characteristics Ta = 25 Parameter Drain source breakdown voltage Gate to source breadown voltage Drain cut-off current Gate leakage current Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol VDSS VGSS IDSS IGSS Yfs Testconditons ID=10mA,VGS=0 ID= 100 A,VDS=0 Min 600 30 100 10 0.85 1.4 6.5 250 VDS=10V,VGS=0,f=1MHZ 55 8 10 ID=1A,VGS(on)=10V,RL=30 25 35 30 8.0 pF pF pF ns ns ns ns Typ Max Unit V V A A S VDS=500V,VGS=0 VGS= 25V,VDS=0 VDS=20V,ID=1A RDS(on) VGS=10V,ID=1A Ciss Coss Crss td(on) tr td(off) tf 3.80 Suitable for Switching regulator www.kexin.com.cn 1