2SK3571

S MD Type MOSFET MOS Field Effect Transistor 2SK3571 TO-263 +0.1 1.27-0.1 Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features 4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) +0.2 8.7-0.2 +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 20 20 48 192 40 1.5 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate Charge Gate to Source Charge Gate to Drain Charge Symbol IDSS IGSS VGS(off) Yfs RDS(on)1 RDS(on)2 Ciss Coss Crss ton tr toff tf QG QGS QGD VDD = 16 V VGS = 10 V ID = 48 A ID=24A,VGS(on)=10V,RG=10 ,VDD=10V VDS=10V,VGS=0,f=1MHZ Testconditons VDS=20V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=24A VGS=10V,ID=24A VGS=4.5V,ID=18A 1.5 11 7.0 10 1100 450 160 13 5 40 9 21 4.2 5 9.0 16 Min Typ Max 10 10 2.5 Unit A A V S m m pF pF pF ns ns ns ns nC nC nC 5.60 1 Gate 2 Drain 3 Source www.kexin.com.cn 1