2SK680A

S MD Type MOSFET MOS Field Effect Transistor 2SK680A SOT-89 Unit: mm +0.1 1.50-0.1 Features Directly driven by Ics having a 5V power source. Not necessary to consider driving current because of its high input impeance. +0.1 4.50-0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 RDS(on)=1.0ÙMAX. @VGS=4.0V,ID=0.5A RDS(on)=0.70ÙMAX. @VGS=10V,ID=0.5A +0.1 0.80-0.1 Has low on-state resistance 1 +0.1 0.48-0.1 2 3 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 4.00-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 1. Source 2. Collector 2. Drain 3. Emiitter 3. Gate 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Symbol VDSS VGSS ID Idp * PD Tch Tstg Rating 30 20 1.0 2.0 2.0 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Symbol IDSS IGSS VGS(off) Yfs RDS(on) RDS(on) Ciss Coss Crss ton tr toff tf ID=0.5A,VGS(on)=10V,RG=10 ,VDD=25V,RL=50Ù VDS=5.0V,VGS=0,f=1MHZ Testconditons VDS=30V,VGS=0 VGS= 20V,VDS=0 VDS=10V,ID=1mA VDS=10V,ID=0.5A VGS=4V,ID=0.5A VGS=10V,ID=0.5A 1.0 0.4 0.6 0.4 130 70 30 12 44 310 160 1.0 0.7 1.6 Min Typ Max 10 10 2.5 Unit A A V S Ù Ù pF pF pF ns ns ns ns www.kexin.com.cn 1