BA597

S MD Type Silicon PIN Diode BA597 Diodes SOD-323 +0.1 1.7-0.1 Unit: mm RF switch, RF attenuator for frequencies above 10 MHz Very low IM distortion 0.475 +0.1 2.6-0.1 1.0max 0.375 A bsolute M axim um R atings T a = 25 P aram eter R everse voltage F orw ard current T otal pow er dissipation T S Junction tem perature S torage tem perature range N ote: 1.P ackage m ounted on alum inum 15 m m 16.7 m m 0.7 m m . 40 1) S ym bol VR IF T to t Tj T stg V alue 50 100 250 150 -55 to + 150 U nit V mA mW Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Symbol IR VF CT Conditions V R =30 V IF = 100 mA V R = 10 V, f = 1 MHz V R = 0 V, f = 100 MHz Forward resistance Charge carrier lifetime rf L Min Typ Max 20 +0.05 0.1-0.02 Unit nA V pF 0.9 0.52 0.27 22 4.2 2.5 IF = 1.5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz IF = 10 mA, IR = 6 mA, IR = 3 mA Marking Marking yellow R +0.1 1.3-0.1 Features +0.05 0.3-0.05 +0.05 0.85-0.05 S www.kexin.com.cn 1