BA886

S MD Type Silicon PIN Diode BA886 Diodes SOT-23 Unit: mm Current-controlled RF resistor for switching and attenuating applications +0.1 2.4-0.1 Frequency range above 1 M Designed for low IM distortion +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute M axim um Ratings Ta = 25 Param eter Reverse Voltage Forward Current Operating tem perature range Storage tem perature range Junction am bient Note: 1. Package m ounted on alum ina 15 m m 16.7 m m 0.7 m m . Sym bol VR IF T op T stg R thJA Value 50 50 -55 to +125 -55 to +150 450 K/W Unit V mA Electrical Characteristics Ta = 25 Param eter Forward Voltage Reverse Current Diode capacitance Sym bol VF IR CT Conditions I F = 50 m A V R = 50 V V R = 50 V, f = 1 MHz V R = 0 V, f =100 MHz f = 100 MHz Forward resistance rf I F = 10 A 2400 58 6.5 7.8 40 2 10 S nH 0.23 0.20 Min Typ Max 1.15 50 0.35 Unit V nA pF IF = 1 m A I F = 10 m A Zero bias conductance Series inductance gp LS V R = 0 V, f = 100 MHz Marking Marking PC +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1