BAP64-04

S MD Type Silicon PIN diode BAP64-04 Diodes SOT-23 Unit: mm High voltage, current controlled +0.1 2.4-0.1 RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features +0.1 2.9-0.1 +0.1 0.4-0.1 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter continuous reverse voltage continuous forward current total power dissipation storage temperature junction temperature thermal resistance from junction to soldering point Ts = 90 Symbol VR IF Ptot Tstg Tj Rth j-s -65 -65 Min Max 175 100 250 +150 +150 220 K/W Unit V mA mW Electrical Characteristics Ta = 25 Parameter forward voltage reverse leakage current Symbol VF VR Conditions IF = 50 mA VR = 175 V VR = 20 V VR = 0; f = 1 MHz diode capacitance Cd VR = 1 V; f = 1 MHz VR = 20 V; f = 1 MHz IF = 0.5 mA; f = 100 MHz; note 1 diode forward resistance rD IF = 1 mA; f = 100 MHz; note 1 IF = 10 mA; f = 100 MHz; note 1 IF = 100 mA; f = 100 MHz; note 1 charge carrier life time series inductance Note 1. Guaranteed on AQL basis: inspection level S4, AQL 1.0. when switched from IF = 10 mA to L Min Typ 0.95 Max 1.1 10 1 +0.1 0.38-0.1 0-0.1 Unit V A pF 0.52 0.37 0.23 20 10 2 0.7 1.55 1.4 0.5 0.35 40 20 3.8 1.35 pF pF IR = 6mA; RL = 100 LS ,measured at IR = 3 mA S nH Marking Marking 4Kp www.kexin.com.cn 1