BAR17

S MD Type Silicon PIN Diodes BAR17 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 RF switch RF attenuator for frequencies above 1 MHz Low distortion factor Long-term stability of electrical characteristics 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector A bsolute M axim um R atings T a = 25 P aram eter R everse voltage F orward current T otal power dissipation, T S Junction tem perature S torage tem perature O perating tem perature range Junction - am bient 1) Junction - soldering point N ote 1. P ackage m ounted on alum ina 15 m m 16.7 m m 0.7 m m . 95 1) S ym bol VR IF P tot Tj T stg T op R thJA R thJS V alue 100 140 250 150 -55 to +150 -55 to +150 295 215 U nit V mA mW K /W Electrical Characteristics Ta = 25 Parameter Reverse current Forward voltage Diode capacitance Charge carrier life time Symbol IR VF CT ôL Test Condition V R = 50 V V R = 100 V I F = 100 mA V R = 50 V, f = 1 MHz V R = 0 , f = 100 MHz I F = 10 mA, I R = 6 mA I F = 0.01 mA, f = 100 MHz Forward resistance rf I F = 0.1 mA, f = 100 MHz I F = 1 mA, f = 100 MHz I F = 10 mA, f = 100 MHz 0.91 0.32 0.37 4 1150 160 23 3.5 s Min Typ Max 50 1 1 0.55 Unit nA A V pF Marking Marking L6 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1