BAS125-04

S MD Type Silicon Schottky Diodes BAS125 series Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 For low-loss, fast-recovery, meter protection,bias isolation and clamping applications Integrated diffused guard ring Low forward voltage 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Reverse voltage Forward current Surge forward current Total power dissipation Junction temperature Storage temperature range Junction-ambient Junction-soldering point Note 1. For detailed information see chapter Package Outlines. 2.Package mounted on alumina 15 mm 3.450 mW per package. 16.7 mm 0.7 mm. Symbol VR IF IFRM P tot Tj T stg R th JA R th JS Note 2 t Ts < 25 10 ms (Note 3) Conditions Values 25 100 500 250 150 -55 to +150 < 725 < 565 K/W K/W Unit V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 S MD Type Silicon Schottky Diodes BAS125 series Diodes Electrical Characteristics Ta = 25 Parameter Reverse voltage Symbol IR Conditions VR = 20 V VR = 25 V IF = 1 mA Forward voltage VF IF = 10 mA IF = 35 mA Diode capacitance Differential forward resistance CT RF VR = 0, f= 10 kHz IF = 5mA, f= 10 kHz 15 385 530 800 900 1.1 pF Min Typ Max 1 10 410 mV Unit A Marking Type Marking BAS125 13 BAS125-04 14 BAS125-05 15 BAS125-06 16 2 www.kexin.com.cn