BAS40-07W

S MD Type Silicon Schottky Diode BAS40-07W Diodes SOT-343 Unit: mm Features General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing A bsolute M axim um R atings T a = 25 P aram eter D iode reverse voltage F orward current S urge forward current, t 10 m s 81 S ym bol VR IF IF R M P tot Tj T op T stg R thJA R thJS V alue 40 120 200 250 150 -55 to +150 -55 to +150 345 275 K /W K /W U nit V mA mA A T otal power dissipation, T S Junction tem perature O perating tem perature range S torage tem perature Junction - am bient 1) Junction - soldering point N ote 1.P ackage m ounted on epoxy pcb 40m m 40m m 1.5m m / 6cm 2 C u Electrical Characteristics Ta = 25 Param eter Breakdown voltage Reverse current Sym bol V (BR) IR Test Condition I (BR) = 10 V R = 30 V V R = 40 V IF = 1 m A Forward voltage VF I F = 10 m A I F = 40 m A Diode capacitance Charge carrier life tim e Differential forward resistance CT ô RF f = 1 MHz; V R = 0 I F = 25 m A I F = 10 m A, f = 10 KHz 10 250 350 600 310 450 720 4 A Min 40 1 10 380 500 1000 5 100 pF ps mV Typ Max Unit mV A Marking Marking 47s www.kexin.com.cn 1